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- Title
Surface Characteristics of MoN <sub>x</sub> Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System.
- Authors
Jeong, Eunkang; Park, Juyun; Choi, Sujin; Kang, Jisoo; Kang, Yong-Cheol
- Abstract
Molybdenum nitride ( MoN x ) thin films were deposited on p-type Si(1 0 0) wafer using reactive radio frequency magnetron sputtering at various nitrogen gas ratios in an ultra high vacuum ( UHV) system. Two metallic phases, Mo(1 1 0) and Mo(2 1 1), were detected from the film obtained without nitrogen gas in the sputter gas. The thickness of the films measured with a surface profiler decreased from 186.0 to 21.5 nm with increasing nitrogen gas ratio in the sputter gas from 0 to 100%, respectively. From the X-ray photoelectron spectroscopy ( XPS) analysis, Mo species were further oxidized by the addition of nitrogen gas in the sputter gas. As nitrogen gas was introduced, the portion of Mo4+ species decreased while those of Mo5+ and Mo6+ species increased. As the nitrogen gas ratio in the sputter gas increased, the formation of MoN x thin films was confirmed by N 1s XPS spectra. The conductivity decreased from 927.7 to 97.1 S/cm with 0 and 100% of nitrogen gas ratio, respectively.
- Subjects
MOLYBDENUM nitrides; CHEMICAL reactions; MAGNETRON sputtering; ULTRAHIGH vacuum; X-ray photoelectron spectroscopy
- Publication
Bulletin of the Korean Chemical Society, 2015, Vol 36, Issue 10, p2446
- ISSN
0253-2964
- Publication type
Article
- DOI
10.1002/bkcs.10470