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- Title
Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers.
- Authors
Cao, Weicheng; Song, Chunyan; Liao, Hui; Yang, Ningxuan; Wang, Rui; Tang, Guanghui; Ji, Hongyu
- Abstract
This document is a correction notice for an article titled "Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers" published in Scientific Reports. The correction addresses errors in Figure 2 of the original article, specifically the incorrect depiction of the CN Concentration range. The corrected version of the article is now available. The authors of the article are Weicheng Cao, Chunyan Song, Hui Liao, Ningxuan Yang, Rui Wang, Guanghui Tang, and Hongyu Ji.
- Subjects
EPITAXIAL layers; CARBON analysis; NUMERICAL analysis; GALLIUM nitride; COMPUTER simulation; LASER-induced breakdown spectroscopy
- Publication
Scientific Reports, 2024, Vol 14, Issue 1, p1
- ISSN
2045-2322
- Publication type
Correction Notice
- DOI
10.1038/s41598-024-60017-6