Found: 39
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P‐1.15: Improving the Performance of IZO Transistor by Adding Buffer Layer.
- Published in:
- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 673, doi. 10.1002/sdtp.17171
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- Article
P‐1.14: Effects of Active Layer Thickness on Performance of InZnO Transistors.
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- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 670, doi. 10.1002/sdtp.17170
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- Article
P‐1.11: Back‐End‐of‐Line Compatible Al‐doped Indium Zinc Oxide Transistors with Excellent Thermal Stability.
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- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 661, doi. 10.1002/sdtp.17167
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- Article
P‐1.12: Sub‐200nm Nano‐scale Indium‐Zinc‐Oxide Ultra‐thin Channel Transistors.
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- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 664, doi. 10.1002/sdtp.17168
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- Article
P‐1.12: Vacuum Annealing Treatment on High‐Performance AlZnO Thin Film Transistors.
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- SID Symposium Digest of Technical Papers, 2022, v. 53, p. 606, doi. 10.1002/sdtp.16038
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- Article
P‐1.11: High‐mobility ZnO thin‐film transistors with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric.
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- SID Symposium Digest of Technical Papers, 2022, v. 53, p. 603, doi. 10.1002/sdtp.16037
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- Article
P‐1.10: The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs.
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- SID Symposium Digest of Technical Papers, 2022, v. 53, p. 600, doi. 10.1002/sdtp.16036
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- Article
P‐1.1: Co‐sputtering‐deposited Hf‐doped ITO Thin Films for Thin Film Transistors Application.
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- SID Symposium Digest of Technical Papers, 2022, v. 53, p. 572, doi. 10.1002/sdtp.16027
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- Article
P‐1.7: Atomic‐Layer‐Deposition Deposited Superlattice‐Structure Al‐Zn‐O Films for Thin Film Transistors Application.
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- SID Symposium Digest of Technical Papers, 2021, v. 52, p. 696, doi. 10.1002/sdtp.15255
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- Article
36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature.
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- SID Symposium Digest of Technical Papers, 2021, v. 52, p. 472, doi. 10.1002/sdtp.15164
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- Article
8.2: High Performance Oxide Thin Film Transistors Fabricated by Atomic Layer Deposition Process.
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- SID Symposium Digest of Technical Papers, 2021, v. 52, p. 141, doi. 10.1002/sdtp.15043
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- Article
P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C.
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- SID Symposium Digest of Technical Papers, 2021, v. 52, p. 435, doi. 10.1002/sdtp.14512
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- Article
P‐28: Novel Asymmetric Source‐drain Thin Film Transistors Fabricated by Atomic Layer Deposition.
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- SID Symposium Digest of Technical Papers, 2019, v. 50, n. 1, p. 1317, doi. 10.1002/sdtp.13177
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- Article
P‐1.13: Influence of the Source/Drain Material on Oxide Semiconductor Thin Film Transistors.
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- SID Symposium Digest of Technical Papers, 2018, v. 49, p. 557, doi. 10.1002/sdtp.12781
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- Article
P-11: Effects of Calcium Doping on Zinc Oxide Thin Film Transistors.
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- SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 1265, doi. 10.1002/sdtp.11862
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- Article
P-16: The Research of Dual-Layer Channel ITO/MZO Thin Film Transistors Fabricated on Glass at Low Temperature.
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- SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 1176, doi. 10.1002/sdtp.10046
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- Article
P-15: High-Performance Fully Transparent Hafnium-Doped Zinc Oxide TFTs Fabricated at Low Temperature.
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- SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 997, doi. 10.1002/j.2168-0159.2014.tb00259.x
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- Article
Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors.
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- Membranes, 2021, v. 11, n. 12, p. 929, doi. 10.3390/membranes11120929
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- Article
Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors.
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- Micromachines, 2022, v. 13, n. 11, p. 1896, doi. 10.3390/mi13111896
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- Article
Integration of Protein Nanocage with CpG Motifs: A Virus‐Mimicked Core‐Shell Nanostructure to Ignite Antitumor Immunity.
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- Small, 2023, v. 19, n. 40, p. 1, doi. 10.1002/smll.202301281
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- Article
Identification of key modules and driving genes in nonalcoholic fatty liver disease by weighted gene co-expression network analysis.
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- BMC Genomics, 2023, v. 24, n. 1, p. 1, doi. 10.1186/s12864-023-09458-3
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- Article
Themis is indispensable for IL-2 and IL-15 signaling in T cells.
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- Science Signaling, 2022, v. 15, n. 721, p. 1, doi. 10.1126/scisignal.abi9983
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- Article
Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.
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- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-1999-7
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- Article
High-performance fully transparent Al–Sn–Zn–O thin-film transistors using double-channel structures.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 12, p. 1069, doi. 10.1049/el.2016.0896
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- Article
High‐performance fully transparent Al–Sn–Zn–O thin‐film transistors using double‐channel structures.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1069, doi. 10.1049/el.2016.0896
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- Article
Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 4, p. 302, doi. 10.1049/el.2015.3277
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- Article
Sn‐doped ZnO thin‐film transistors with AZO, TZO and Al heterojunction source/drain contacts.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 3, p. 302, doi. 10.1049/el.2015.3277
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- Article
High mobility transparent flexible nickel‐doped zinc oxide thin‐film transistors with small subthreshold swing.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 20, p. 1595, doi. 10.1049/el.2015.2041
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- Article
Effects of substrate temperature on performance of calcium-doped zinc oxide TFTs.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 16, p. 1286, doi. 10.1049/el.2015.1089
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- Article
Effects of substrate temperature on performance of calcium‐doped zinc oxide TFTs.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 16, p. 1286, doi. 10.1049/el.2015.1089
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- Article
Performance enhancement of fully transparent tin-doped zinc oxide thin-film transistors fabricated by sputtering at low temperature.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 3, p. 272, doi. 10.1049/el.2014.3448
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- Article
Performance enhancement of fully transparent tin‐doped zinc oxide thin‐film transistors fabricated by sputtering at low temperature.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 3, p. 272, doi. 10.1049/el.2014.3448
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- Publication type:
- Article
High-performance full transparent tin-doped zinc oxide thin-film transistors fabricated on glass at low temperatures.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 20, p. 1463, doi. 10.1049/el.2014.2887
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- Article
High‐performance full transparent tin‐doped zinc oxide thin‐film transistors fabricated on glass at low temperatures.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 19, p. 1463, doi. 10.1049/el.2014.2887
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- Publication type:
- Article
High-performance dual-layer channel ITO/TZO TFTs fabricated on glass substrate.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 8, p. 633, doi. 10.1049/el.2014.0344
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- Article
High‐performance dual‐layer channel ITO/TZO TFTs fabricated on glass substrate.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 8, p. 633, doi. 10.1049/el.2014.0344
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- Article
Mechanisms of Scaling Effect for Emerging Nanoscale Interconnect Materials.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 10, p. 1760, doi. 10.3390/nano12101760
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- Article
Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 7, p. 1167, doi. 10.3390/nano12071167
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- Article
Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 1, p. 172, doi. 10.3390/nano12010172
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- Article