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- Title
Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(ZrTi)O ferroelectric substrate.
- Authors
Strikha, M.
- Abstract
A numerical model has been proposed to explain the antihysteresis behavior of the resistivity of graphene on a Pb(ZrTi)O ferroelectric substrate with a change in the gate voltage. The model takes into account the screening of the electric field in the substrate by electrons trapped in states connected with the graphene-ferroelectric interface and describes the previously obtained experimental dependences. The estimates can be important for creating elements of new-generation energy-independent memory using two stable resistivity values that appear in the antihysteresis effect; logical 0 and 1 are assigned to these two values.
- Subjects
HYSTERESIS; GRAPHENE; FERROELECTRIC crystals; SUBSTRATES (Materials science); NUMERICAL analysis; ELECTRIC potential; ELECTRIC fields
- Publication
JETP Letters, 2012, Vol 95, Issue 4, p198
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/S002136401204008X