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- Title
Surface state-induced barrierless carrier injection in quantum dot electroluminescent devices.
- Authors
Lee, Hyeonjun; Jeong, Byeong Guk; Bae, Wan Ki; Lee, Doh C.; Lim, Jaehoon
- Abstract
The past decade has witnessed remarkable progress in the device efficiency of quantum dot light-emitting diodes based on the framework of organic-inorganic hybrid device structure. The striking improvement notwithstanding, the following conundrum remains underexplored: state-of-the-art devices with seemingly unfavorable energy landscape exhibit barrierless hole injection initiated even at sub-band gap voltages. Here, we unravel that the cause of barrierless hole injection stems from the Fermi level alignment derived by the surface states. The reorganized energy landscape provides macroscopic electrostatic potential gain to promote hole injection to quantum dots. The energy level alignment surpasses the Coulombic attraction induced by a charge employed in quantum dots which adjust the local carrier injection barrier of opposite charges by a relatively small margin. Our finding elucidates how quantum dots accommodate barrierless carrier injection and paves the way to a generalized design principle for efficient electroluminescent devices employing nanocrystal emitters. Hybrid quantum dot light-emitting diodes exhibit barrier-less carrier injection despite a seemingly unfavourable energy landscape. Here, Lee et al. unravel the origin of this barrier-less carrier injection, showing the critical role of surface states of quantum dots.
- Subjects
QUANTUM dot devices; INJECTIONS; QUANTUM dots; ELECTROLUMINESCENT devices; ELECTRIC potential; QUANTUM states; NANOCRYSTALS; PHOSPHORESCENCE
- Publication
Nature Communications, 2021, Vol 12, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-021-25955-z