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- Title
Robust photogalvanic effect in the armchair B<sub>2</sub>C<sub>4</sub>P<sub>2</sub> photodetector by vacancy and substitution-doping.
- Authors
Fu, Xi; Lin, Jian; Liao, Wenhu; Guo, Jiyuan; Li, Xiaowu
- Abstract
In this study, we investigated the linear photogalvanic effect (PGE) phenomena in an armchair photodetector device based on the B2C4P2 monolayer, which was predicted and studied in a previous work (J Phys Chem Lett 12:3436–3442, 2021). The produced photocurrents show a cosine relation with the incident angles, and the vacancies and substitution-doping can significantly enhance the photocurrents generated and form robust PGEs due to the incremental asymmetry in the B2C4P2 photodetector. Additionally, the armchair B2C4P2 photodetector possesses a very high extinction ratio corresponding to a more sensitive polarization detection. This work demonstrates that the B2C4P2 monolayer can be used as the high-performance PGE-driven photodetector in low-energy-consumption optoelectronics devices. Robust photogalvanic effect (PGE) phenomena and very high extinction ratio have been produced in the armchair B2C4P2 photodetector with the vacancies and substitution-doping included.
- Subjects
PHOTOCONDUCTIVITY; PHOTODETECTORS; ARMCHAIRS; BORON nitride; PHOTOCURRENTS; OPTOELECTRONICS
- Publication
European Physical Journal B: Condensed Matter, 2024, Vol 97, Issue 1, p1
- ISSN
1434-6028
- Publication type
Article
- DOI
10.1140/epjb/s10051-023-00632-w