We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Flexible Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility.
- Authors
Chen, Yuting; Yang, Yang; Yuan, Peng; Jiang, Pengfei; Wang, Yuan; Xu, Yannan; Lv, Shuxian; Ding, Yaxin; Dang, Zhiwei; Gao, Zhaomeng; Gong, Tiancheng; Wang, Yan; Luo, Qing
- Abstract
Flexible memory devices are promising for information storage and data processing applications in portable, wearable, and smart electronics operating under curved conditions. In this work, we realized high-performance flexible ferroelectric capacitors based on Hf0.5Zr0.5O2 (HZO) thin film by depositing a buffer layer of Al2O3 on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible ferroelectric HZO films exhibit high remnant polarization (Pr) of 21 µC/cm2. Furthermore, deterioration of polarization, retention, and endurance performance was not observed even at a bending radius of 2 mm after 5,000 bending cycles. This work marks a critical step in the development of high-performance flexible HfO2-based ferroelectric memories for next-generation wearable electronic devices.
- Publication
Nano Research, 2022, Vol 15, Issue 4, p2913
- ISSN
1998-0124
- Publication type
Article
- DOI
10.1007/s12274-021-3896-8