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- Title
Fabrication and Characterization of Silicon-Based Antimonene Thin Film via Electron Beam Evaporation.
- Authors
Zhong, Tingting; Zeng, Lina; Yang, Junfeng; Shu, Yichao; Sun, Li; Li, Zaijin; Chen, Hao; Liu, Guojun; Qiao, Zhongliang; Qu, Yi; Xu, Dongxin; Li, Lianhe; Li, Lin
- Abstract
Antimonene has attracted much attention due to its excellent characteristics of high carrier mobility, thermoelectric properties and high stability. It has great application prospects in Q-switched lasers, laser protection and spintronics. At present, the epitaxy growth of antimonene mainly depends on molecular beam epitaxy. We have successfully prepared antimonene films on silicon, germanium/silicon substrates for the first time using electron beam evaporation coating and studied the effects of the deposition rate and substrate on the preparation of antimonene; film characterization was performed via confocal microprobe Raman spectroscopy, via X-ray diffraction and using a scanning electron microscope. Raman spectroscopy showed that different deposition rates can lead to the formation of different structures of antimonene, such as α phase and β phase. At the same time, it was found that the growth of antimonene is also affected by different substrates and ion beams.
- Subjects
THIN films; MOLECULAR beam epitaxy; Q-switched lasers; SILICON films; SCANNING electron microscopes; ELECTRON beams; ION beams
- Publication
Materials (1996-1944), 2024, Vol 17, Issue 5, p1090
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma17051090