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- Title
Field Emission of ITO-Coated Vertically Aligned Nanowire Array.
- Authors
Chang Lee; Seok Lee; Seung Lee
- Abstract
An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.
- Subjects
FIELD emission; NANOWIRES; ELECTRIC fields; SCANNING electron microscopes; ELECTRONS
- Publication
Nanoscale Research Letters, 2010, Vol 5, Issue 7, p1128
- ISSN
1931-7573
- Publication type
Article
- DOI
10.1007/s11671-010-9613-2