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- Title
Electron-beam-induced conductivity in self-organized silicon quantum wells.
- Authors
Andronov, A. N.; Robozerov, S. V.; Bagraev, N. T.; Klyachkin, L. E.; Malyarenko, A. M.
- Abstract
Electron-beam diagnostics are used to study self-organized quantum wells which form within ultrashallow silicon p[sup +]-n junctions under the conditions of nonequilibrium boron diffusion. The energy dependence and current-voltage characteristics of the electron-beaminduced conductivity are investigated with relative dominance of both longitudinal and transverse quantum wells, which are oriented parallel and perpendicularly to the p-n junction plane, respectively. Current-voltage characteristics of the electron-beam-induced conductivity are exhibited for the first time with both reverse and forward biasing of the silicon p[sup +]-n junction. This became possible because of the presence of self-organized transverse quantum wells within the ultrashallow p[sup +] diffusion profile, while self-organized longitudinal quantum wells promote the appearance of electron-beam-induced conductivity only when the p[sup +]-n junction is reverse-biased. The distribution of the probability for the separation of electron-hole pairs across the thickness of the crystal derived from the energy dependences of the electron-beam-induced conductivity reveals effects of the avalanche multiplication of the nonequilibrium carriers as a result of the spatial separation of electrons and holes in the field of a p[sup +]-n junction that contains self-organized transverse quantum wells.
- Subjects
ELECTRON beam curing; QUANTUM wells; SILICON; SEMICONDUCTORS
- Publication
Semiconductors, 1999, Vol 33, Issue 7, p782
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1187781