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- Title
Detailed Analysis of Device Parameters by Means of Different Techniques in Schottky Devices.
- Authors
Tuğluoğlu, Nihat; Koralay, Haluk; Akgül, Kübra; Çavdar, Şükrü
- Abstract
In the present work, the detailed device parameters of Au/ n-Si (100)/Al Schottky devices are calculated by means of the conductance-voltage-frequency ( G- V- f), capacitance-voltage-frequency ( C- V- f) and current-voltage ( I- V) measurements at 300 K. The structure of the device shows a good rectifying behavior. The barrier height $$\left( {\Phi_{\rm{B}} } \right)$$ value of 0.822 eV from the C- V is determined to be higher than the 0.774 eV from the I- V. The barrier height $$\left( {\Phi_{\rm{B}} } \right)$$ and series resistance $$\left( {R_{\rm{s}} } \right)$$ values of the sample determined from the Cheung and Cheung technique are 0.755 eV and 220.5 Ω, respectively. The values of the carrier donor concentration ( $$N_{\rm{D}}$$ ), the level of Fermi ( $$ E_{\rm{F}}$$ ), the lowering of image force ( $$\Delta \Phi_{\rm{b}}$$ ), the space charge layer width ( $$ W_{\rm{D}}$$ ) and the maximum electric field ( $$E_{\rm{max}}$$ ) are determined as 1.305 × 10 cm, 0.258 eV, 0.0136 eV, 7.6 × 10 cm and 1.52 × 10 V/cm, respectively. The density of the interface state $$(N_{\rm{ss}})$$ determined from the I- V characteristic ranges from 8.80 × 10 eV cm to 5.44 × 10 eV cm.
- Subjects
SCHOTTKY barrier diodes; ELECTRIC fields; SCHOTTKY barrier; DENSITY; INTERFACE dynamics
- Publication
Journal of Electronic Materials, 2016, Vol 45, Issue 8, p3859
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-016-4580-8