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- Title
Thermoelectric Properties of Sn-Doped BiSbTe Thin Films.
- Authors
Kim, Kwang-Chon; Kwon, Beomjin; Kim, Hyun; Baek, Seung-Hyub; Park, Chan; Kim, Seong; Kim, Jin-Sang
- Abstract
The effect of Sn doping on the thermoelectric properties of p-type BiSbTe (BST) thin films was studied. Sn-doped BST films were grown on 4° tilted GaAs (001) substrates by metal-organic chemical vapor deposition. To control the Sn ion concentration in the films, we systematically controlled the dose of the Sn precursor by varying the H flow rate from 0 sccm to 100 sccm. The hole carrier concentration increased as the H flow rate was increased. Interestingly, the Seebeck coefficient of the films simultaneously increased with the carrier concentration when the H flow rate was increased up to 60 sccm. This might be attributed to the formation of virtual bound states in the valence band by Sn doping. Consequently, the Sn ion doping contributed to the thermopower enhancement of the BST films.
- Subjects
THERMOELECTRICITY; THIN film research; SEEBECK coefficient; VALENCE bands; THERMOELECTRIC power
- Publication
Journal of Electronic Materials, 2015, Vol 44, Issue 6, p1573
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-014-3483-9