We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Optical Gain in Heavily Doped Al<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N:Si Structures.
- Authors
Bokhan, P. A.; Zhuravlev, K. S.; Zakrevsky, Dm. E.; Malin, T. V.; Osinnykh, I. V.; Fateev, N. V.
- Abstract
Gain characteristics of heavily doped AlxGa1 –xN/AlN:Si structures with c x = 0.65 and 0.74 have been studied under pulsed optical pumping by Nd:YAG laser radiation at wavelength λ = 266 nm. The absolute values of the optical gain measured at spectral maximum of the room-temperature luminescence spectrum reach (0.5–6) × 103 сm–1 at an pumping power density of 8–600 kW/cm2. Cross sections of the radiative and donor–acceptor recombination are close to each other and exceed 1016 cm2.
- Subjects
OPTICAL pumping; LASER beams; NEODYMIUM lasers; LASER pumping; ABSOLUTE value; THULIUM
- Publication
Technical Physics Letters, 2019, Vol 45, Issue 9, p951
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785019090189