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- Title
Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold.
- Authors
Ainbund, M.; Alekseev, A.; Alymov, O.; Jmerik, V.; Lapushkina, L.; Mizerov, A.; Ivanov, S.; Pashuk, A.; Petrov, S.
- Abstract
Solar-blind UV photodetectors based on photocathodes are among the important applications of heterostructures based on group III metal nitride semiconductors. Related investigations are most frequently devoted to photocathodes with p-GaN active regions characterized by a long-wavelength sensitivity threshold at 360 nm. Since the detected radiation is mostly concentrated in the spectral range below 240-290 nm, corresponding displacement of the long-wavelength sensitivity threshold of photodetectors by using photocathodes with p-AlGaN active regions is a topical task. We present preliminary results on manufacturing photocathodes with a p-AlGaN ( x = 0.1 and 0.3) active region (possessing a long-wavelength sensitivity threshold at 330 and 300 nm, respectively).
- Subjects
ULTRAVIOLET radiation; PHOTOCATHODES; ELECTRIC properties of aluminum gallium nitride; HETEROSTRUCTURES; SPECTRUM analysis; OPTOELECTRONIC devices; SEMICONDUCTORS
- Publication
Technical Physics Letters, 2012, Vol 38, Issue 5, p439
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785012050033