We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Dual-gated single-molecule field-effect transistors beyond Moore's law.
- Authors
Meng, Linan; Xin, Na; Hu, Chen; Sabea, Hassan Al; Zhang, Miao; Jiang, Hongyu; Ji, Yiru; Jia, Chuancheng; Yan, Zhuang; Zhang, Qinghua; Gu, Lin; He, Xiaoyan; Selvanathan, Pramila; Norel, Lucie; Rigaut, Stéphane; Guo, Hong; Meng, Sheng; Guo, Xuefeng
- Abstract
As conventional silicon-based transistors are fast approaching the physical limit, it is essential to seek alternative candidates, which should be compatible with or even replace microelectronics in the future. Here, we report a robust solid-state single-molecule field-effect transistor architecture using graphene source/drain electrodes and a metal back-gate electrode. The transistor is constructed by a single dinuclear ruthenium-diarylethene (Ru-DAE) complex, acting as the conducting channel, connecting covalently with nanogapped graphene electrodes, providing field-effect behaviors with a maximum on/off ratio exceeding three orders of magnitude. Use of ultrathin high-k metal oxides as the dielectric layers is key in successfully achieving such a high performance. Additionally, Ru-DAE preserves its intrinsic photoisomerisation property, which enables a reversible photoswitching function. Both experimental and theoretical results demonstrate these distinct dual-gated behaviors consistently at the single-molecule level, which helps to develop the different technology for creation of practical ultraminiaturised functional electrical circuits beyond Moore's law. Conventional silicon-based transistors, which sit at the heart of every computer, are fast approaching the limit of miniaturisation. Here, Meng et al demonstrate a field-effect transistor composed of a single rutheniumdiarylethene molecule with large on/off ratio.
- Subjects
FIELD-effect transistors; MOORE'S law; ELECTRIC circuits; METALLIC oxides; SINGLE molecules; METAL oxide semiconductor field-effect transistors; TRANSISTORS
- Publication
Nature Communications, 2022, Vol 13, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-022-28999-x