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- Title
Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment.
- Authors
Kim, Yongjae; Kang, Hojin; Ha, Heeju; Choi, Minsuk; Jeon, Minsung; Cho, Sung Min; Chae, Heeyeop
- Abstract
The plasma atomic layer etching (ALE) process for Ru was developed with surface fluorination and ion bombardment. We employed two methods for surface fluorination: (i) fluorocarbon deposition using CHF3 or C4F8 plasmas and (ii) chemisorption and diffusion with CF4 plasma. C4F8 plasma generated a more fluorine rich fluorocarbon layer on the Ru surface compared with CHF3 plasma, and a higher etch per cycle (EPC) of 1.5 nm/cycle was achieved with C4F8 plasma, in contrast to the 0.6 nm/cycle achieved with CHF3 plasma. Moreover, chemisorption and diffusion with CF4 plasma yielded an EPC of 1.2 nm/cycle. The ALE process using CHF3 plasma shows the lowest fluorine residue and lowest surface roughness compared with the ALE process using C4F8 and CF4 plasmas.
- Subjects
FLUORINATION; RUTHENIUM; ETCHING; PLASMA diffusion; SURFACE roughness; ION bombardment
- Publication
Plasma Processes & Polymers, 2024, Vol 21, Issue 3, p1
- ISSN
1612-8850
- Publication type
Article
- DOI
10.1002/ppap.202300161