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- Title
The Electrical and Photoelectrical Properties of n-In[sub 2]Se[sub 3]–p-InSe Heterostructures.
- Authors
Drapak, S. I.; Netyaga, V. V.; Kovalyuk, Z. D.
- Abstract
The current-voltage and voltage-capacitance characteristics of an originally fabricated photosensitive, radiation-stable n-In[sub 2]Se[sub 3]-p-InSe heterostructure were measured at liquid nitrogen temperature and in the temperature interval from 230 to 330 K. It is established that the direct currents are determined (i) by the thermoemission of carriers and their recombination at the interface and (ii) by tunneling via local centers. The reverse currents are also due to the tunneling via local centers. The spectral dependence of the relative quantum efficiency of the heterostructure is presented.
- Subjects
HETEROSTRUCTURES; SEMICONDUCTORS
- Publication
Technical Physics Letters, 2002, Vol 28, Issue 9, p711
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1511762