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- Title
Investigation of the Effect of Irradiation by a Low-Energy Electron Beam on the Capacitance–Voltage Characteristics of SiO<sub>2</sub>.
- Authors
Kulanchikov, Yu. O.; Vergeles, P. S.; Yakimov, E. B.
- Abstract
The effect of electron-beam irradiation on the properties of metal-insulator-semiconductor Al/SiO2/n-Si structures is investigated by the method of measurement of the capacitance–voltage (C–V) characteristics. It is found that charging phenomena and the formation of new centers at the SiO2-Si interface in structures based on n-Si become visible at substantially higher irradiation doses than in the case of p-Si. A decrease in the effective donor concentration as a result of irradiation is revealed. This can be explained by the passivation of phosphor with hydrogen. Annealing for 10 minutes at a temperature of 100°C results in recovery of the effective donor concentration, and after annealing at 250°C, complete reconstruction of the C–V curves to the initial state is observed.
- Publication
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2021, Vol 15, Issue 5, p1045
- ISSN
1027-4510
- Publication type
Article
- DOI
10.1134/S1027451021050323