Found: 16
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Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD Oxide for Shallow Trench Isolation of finFET Integration.
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- Microscopy & Microanalysis, 2017, v. 23, p. 1462, doi. 10.1017/S1431927617007978
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- Article
2D Junction Profiling on Semiconductor Device Reliability Fail.
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- Microscopy & Microanalysis, 2017, v. 23, p. 1510, doi. 10.1017/S1431927617008212
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- Article
Dual Lens Electron Holography for High Spatial Resolution Junction and Strain Mapping of Semiconductor Devices.
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- Microscopy & Microanalysis, 2014, v. 20, n. S3, p. 240, doi. 10.1017/S143192761400292X
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- Article
Characterization of Strontium Oxide Layers on Silicon for CMOS High-K Gate Stack Scaling.
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- 2011
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- Abstract
Strain Mapping on Semiconductor Device by Dark Field Electron Holography.
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- 2010
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- Abstract
Structure and Composition of Metal-Doped HfO2 Gate Oxides in CMOS Devices Studied by High Resolution STEM and EELS.
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- 2010
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- Abstract
Geometric Limits on Spatial Resolution for Cs Corrected STEM Analysis of Thick TEM Lamellae.
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- 2010
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- Abstract
Electron holography with variable magnification for semiconductor device characterization.
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- Microscopy & Microanalysis, 2005, v. 11, p. 564, doi. 10.1017/S1431927605500035
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- Article
Use of backscattered electron detector arrays for forming backscattered electron images in the scanning electron microscope.
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- Scanning, 2006, v. 28, n. 1, p. 27, doi. 10.1002/sca.4950280105
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- Article
The pyrolysis of extracted solids from oxidized kraft black liquor after lignin precipitation.
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- Canadian Journal of Chemical Engineering, 1973, v. 51, n. 6, p. 746, doi. 10.1002/cjce.5450510620
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- Article
Electron energy-loss near-edge structure – a tool for the investigation of electronic structure on the nanometre scale.
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- Journal of Microscopy, 2001, v. 203, n. 2, p. 135, doi. 10.1046/j.1365-2818.2001.00898.x
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- Article
Undergraduate TEM instruction by telepresence microscopy over the Internet.
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- Journal of Microscopy, 1997, v. 187, n. 3, p. 139, doi. 10.1046/j.1365-2818.1997.2600816.x
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- Article
Quantitative near-edge structure analysis of diamond-like carbon in the electron microscope using a two-window method.
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- Journal of Microscopy, 1995, v. 180, n. 1, p. 22, doi. 10.1111/j.1365-2818.1995.tb03653.x
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- Article
Electron energy-loss near-edge structure of internal interfaces by spatial difference spectroscopy.
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- Journal of Microscopy, 1995, v. 180, n. 1, p. 12, doi. 10.1111/j.1365-2818.1995.tb03652.x
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- Article
Spatially resolved electron energy-loss studies of metal-ceramic interfaces in transition metal/alumina cermets.
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- Journal of Microscopy, 1995, v. 177, n. 3, p. 369, doi. 10.1111/j.1365-2818.1995.tb03568.x
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- Article
Dual-Lens Electron Holography for Junction Profiling and Strain Mapping of Semiconductor Devices.
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- Microscopy Today, 2014, v. 22, n. 3, p. 28, doi. 10.1017/S1551929514000352
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- Article