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- Title
High Open‐Circuit Voltage in Full‐Inorganic Sb<sub>2</sub>S<sub>3</sub> Solar Cell via Modified Zn‐Doped TiO<sub>2</sub> Electron Transport Layer.
- Authors
Ishaq, Muhammad; Chen, Shuo; Farooq, Umar; Azam, Muhammad; Deng, Hui; Su, Zheng-Hua; Zheng, Zhuang-Hao; Fan, Ping; Song, Hai-Sheng; Liang, Guang-Xing
- Abstract
Antimony sulfide (Sb2S3) is emerging as a popular photovoltaic candidate for thin‐film solar cells due to its large absorption coefficient, suitable bandgap, nontoxic, and earth‐abundant nature. The performance of thermally evaporated Sb2S3 devices is severely restricted by interfacial recombination leading to high open‐circuit voltage (VOC) losses. CdS as electron transport layer (ETL) has overcome this problem, but triggered lower JSC issues due to parasitic absorption loss conceding to its smaller bandgap. Herein, a spray pyrolysis method is adopted for the deposition of a uniform and compact Zn‐doped TiO2 film with tuned energy levels to facilitate charge extraction and transport. The solar cell fabricated with a modified TiO2 ETL holds superior interface quality, high build‐in potential, and suppressed recombination losses, therefore pronouncedly improves the VOC. As a result, the efficiency of the device is boosted from 4.41% to 5.16%, a record VOC of 702 mV for Cd‐free full‐inorganic Sb2S3 solar cell is achieved. These findings are expected to be implemented in other Sb‐chalcogenide solar cells to further enhance the device performance.
- Subjects
SOLAR cells; ELECTRON transport; SILICON solar cells; HIGH voltages; OPEN-circuit voltage; TITANIUM dioxide; ABSORPTION coefficients
- Publication
Solar RRL, 2020, Vol 4, Issue 12, p1
- ISSN
2367-198X
- Publication type
Article
- DOI
10.1002/solr.202000551