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- Title
Characteristics of SrBi[sub 2] Ta[sub 2] O[sub 9] ferroelectric films on GaAs with a TiO[sub 2] buffer layer.
- Authors
Liu, X.H.; Liu, Z.G.; Wang, Y.P.; Zhu, T.; Liu, J.M.
- Abstract
Mainly [115]-oriented SrBi[sub 2] Ta[sub 2] O[sub 9] (SBT) films were prepared on GaAs(100) substrates with TiO[sub 2] buffer layers. Both the SBT films and the TiO[sub 2] buffer layers were deposited by pulsed laser deposition (PLD) using a KrF excimer laser. The depth profile of the constituent elements observed by Auger electron spectrometry (AES) shows no remarkable diffusion at both the interfaces between SBT and TiO[sub 2] and between TiO[sub 2] and the GaAs substrate. The electrical characteristics of the Pt/SBT/TiO[sub 2] /GaAs(100) structures show a ferroelectric hysteresis loop with a small remanent polarization (∼0.5 μC/cm[sup 2] ).
- Subjects
FERROELECTRIC thin films; GALLIUM arsenide; TITANIUM dioxide; AUGER effect
- Publication
Applied Physics A: Materials Science & Processing, 2003, Vol 76, Issue 2, p197
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s003390201417