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Analysis of hard X- and gamma-rays and microwave emissions during the flare of July 18, 2002.
Published in:
Geomagnetism & Aeronomy, 2014, v. 54, n. 8, p. 1058, doi. 10.1134/S0016793214080027
By:
- Charikov, Yu.;
- Aptekar, R.;
- Golenetsky, S.;
- Kudryavtsev, I.;
- Kuznetsov, S.;
- Melnikov, V.;
- Pal'shin, V.;
- Svinkin, D.;
- Sokolova, Z.;
- Ulanov, M.;
- Frederiks, D.;
- Tsvetkova, A.;
- Shabalin, A.
Publication type:
Article
Switching between generation of two quantum states in quantum-well laser diodes.
Published in:
Technical Physics Letters, 2008, v. 34, n. 8, p. 708, doi. 10.1134/S1063785008080257
By:
- Sokolovskiĭ, G. S.;
- Vinokurov, D. A.;
- Deryagin, A. G.;
- Dudelev, V. V.;
- Kuchinskiĭ, V. I.;
- Losev, S. N.;
- Lyutetskii, A. V.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Tarasov, I. S.
Publication type:
Article
High-Power 1.8-μm InGaAsP/InP Lasers.
Published in:
Technical Physics Letters, 2002, v. 28, n. 2, p. 113, doi. 10.1134/1.1458507
By:
- Golikova, E. G.;
- Kureshov, V. A.;
- Leshko, A. Yu.;
- Lyutetskiı, A. V.;
- Pikhtin, N. A.;
- Ryaboshtan, Yu. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Fetisova, N. V.;
- Bondarev, A. D.;
- Tarasov, I. S.
Publication type:
Article
Investigation of strained In[sub x]Ga[sub 1-x]As/InP quantum wells fabricated by metalorganic compound hydride epitaxy.
Published in:
Technical Physics Letters, 1998, v. 24, n. 11, p. 886, doi. 10.1134/1.1262303
By:
- Bondarev, A. D.;
- Vinokurov, D. A.;
- Kapitonov, V. A.;
- Kovalenkov, O. V.;
- Sokolova, Z. N.;
- Tarasov, I. S.
Publication type:
Article
Diagnosis of cancer using microchip-based system for simultaneous quantitation of six tumor markers.
Published in:
Doklady Biochemistry & Biophysics, 2011, v. 437, n. 1, p. 98, doi. 10.1134/S1607672911020128
By:
- Ryabykh, T. P.;
- Sokolova, Z. A.;
- Paklin, N. B.;
- Osipova, T. V.
Publication type:
Article
Analysis of Stability of Generation in Quantum Well Lasers.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 464, doi. 10.1134/S1063782624050154
By:
- Sokolova, Z. N.;
- Asryan, L. V.
Publication type:
Article
Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 115, doi. 10.1134/S106378262201016X
By:
- Sokolova, Z. N.;
- Pikhtin, N. A;
- Slipchenko, S. O.;
- Asryan, L. V.
Publication type:
Article
Analysis of the Threshold Conditions and Lasing Efficiency of Internally Circulating Modes in Large Rectangular Cavities Based on AlGaAs/GaAs/InGaAs Laser Heterostructures.
Published in:
Semiconductors, 2021, v. 55, n. 5, p. 518, doi. 10.1134/S1063782621050134
By:
- Podoskin, A. A.;
- Romanovich, D. N.;
- Shashkin, I. S.;
- Gavrina, P. S.;
- Sokolova, Z. N.;
- Slipchenko, S. O.;
- Pikhtin, N. A.
Publication type:
Article
Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures.
Published in:
Semiconductors, 2020, v. 54, n. 5, p. 581, doi. 10.1134/S1063782620050097
By:
- Podoskin, A. A.;
- Romanovich, D. N.;
- Shashkin, I. S.;
- Gavrina, P. S.;
- Sokolova, Z. N.;
- Slipchenko, S. O.;
- Pikhtin, N. A.
Publication type:
Article
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 828, doi. 10.1134/S1063782619060162
By:
- Podoskin, A. A.;
- Romanovich, D. N.;
- Shashkin, I. S.;
- Gavrina, P. S.;
- Sokolova, Z. N.;
- Slipchenko, S. O.;
- Pikhtin, N. A.
Publication type:
Article
Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers.
Published in:
Semiconductors, 2017, v. 51, n. 7, p. 959, doi. 10.1134/S1063782617070326
By:
- Sokolova, Z.;
- Veselov, D.;
- Pikhtin, N.;
- Tarasov, I.;
- Asryan, L.
Publication type:
Article
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110-120 K).
Published in:
Semiconductors, 2016, v. 50, n. 10, p. 1396, doi. 10.1134/S1063782616100249
By:
- Veselov, D.;
- Shashkin, I.;
- Bobretsova, Yu.;
- Bakhvalov, K.;
- Lutetskiy, A.;
- Kapitonov, V.;
- Pikhtin, N.;
- Slipchenko, S.;
- Sokolova, Z.;
- Tarasov, I.
Publication type:
Article
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers.
Published in:
Semiconductors, 2016, v. 50, n. 5, p. 667, doi. 10.1134/S1063782616050225
By:
- Sokolova, Z.;
- Bakhvalov, K.;
- Lyutetskiy, A.;
- Pikhtin, N.;
- Tarasov, I.;
- Asryan, L.
Publication type:
Article
Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser.
Published in:
Semiconductors, 2015, v. 49, n. 11, p. 1506, doi. 10.1134/S1063782615110202
By:
- Sokolova, Z.;
- Pikhtin, N.;
- Tarasov, I.;
- Asryan, L.
Publication type:
Article
On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures.
Published in:
Semiconductors, 2014, v. 48, n. 10, p. 1342, doi. 10.1134/S1063782614100236
By:
- Pikhtin, N.;
- Lyutetskiy, A.;
- Nikolaev, D.;
- Slipchenko, S.;
- Sokolova, Z.;
- Shamakhov, V.;
- Shashkin, I.;
- Bondarev, A.;
- Vavilova, L.;
- Tarasov, I.
Publication type:
Article
Semiconductor lasers with internal wavelength selection.
Published in:
Semiconductors, 2013, v. 47, n. 1, p. 122, doi. 10.1134/S1063782613010247
By:
- Zolotarev, V.;
- Leshko, A.;
- Lyutetskii, A.;
- Nikolaev, D.;
- Pikhtin, N.;
- Podoskin, A.;
- Slipchenko, S.;
- Sokolova, Z.;
- Shamakhov, V.;
- Arsent'ev, I.;
- Vavilova, L.;
- Bakhvalov, K.;
- Tarasov, I.
Publication type:
Article
Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes.
Published in:
Semiconductors, 2012, v. 46, n. 10, p. 1316, doi. 10.1134/S1063782612100077
By:
- Kabanov, V.;
- Lebiadok, Ye.;
- Ryabtsev, G.;
- Smal, A.;
- Shchemelev, M.;
- Vinokurov, D.;
- Slipchenko, S.;
- Sokolova, Z.;
- Tarasov, I.
Publication type:
Article
Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050-1070 nm).
Published in:
Semiconductors, 2012, v. 46, n. 9, p. 1211, doi. 10.1134/S1063782612090217
By:
- Shashkin, I.;
- Vinokurov, D.;
- Lyutetskiy, A.;
- Nikolaev, D.;
- Pikhtin, N.;
- Rudova, N.;
- Sokolova, Z.;
- Slipchenko, S.;
- Stankevich, A.;
- Shamakhov, V.;
- Veselov, D.;
- Bakhvalov, K.;
- Tarasov, I.
Publication type:
Article
Thermal delocalization of carriers in semiconductor lasers (λ = 1010-1070 nm).
Published in:
Semiconductors, 2012, v. 46, n. 9, p. 1207, doi. 10.1134/S1063782612090205
By:
- Shashkin, I.;
- Vinokurov, D.;
- Lyutetskiy, A.;
- Nikolaev, D.;
- Pikhtin, N.;
- Rastegaeva, M.;
- Sokolova, Z.;
- Slipchenko, S.;
- Stankevich, A.;
- Shamakhov, V.;
- Veselov, D.;
- Bondarev, A.;
- Tarasov, I.
Publication type:
Article
Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser.
Published in:
Semiconductors, 2012, v. 46, n. 8, p. 1044, doi. 10.1134/S1063782612080222
By:
- Sokolova, Z.;
- Tarasov, I.;
- Asryan, L.
Publication type:
Article
High-order diffraction gratings for high-power semiconductor lasers.
Published in:
Semiconductors, 2012, v. 46, n. 2, p. 241, doi. 10.1134/S1063782612020236
By:
- Vasil'eva, V.;
- Vinokurov, D.;
- Zolotarev, V.;
- Leshko, A.;
- Petrunov, A.;
- Pikhtin, N.;
- Rastegaeva, M.;
- Sokolova, Z.;
- Shashkin, I.;
- Tarasov, I.
Publication type:
Article
Capture of charge carriers and output power of a quantum well laser.
Published in:
Semiconductors, 2011, v. 45, n. 11, p. 1494, doi. 10.1134/S1063782611110261
By:
- Sokolova, Z.;
- Tarasov, I.;
- Asryan, L.
Publication type:
Article
Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser.
Published in:
Semiconductors, 2011, v. 45, n. 5, p. 663, doi. 10.1134/S1063782611050265
By:
- Slipchenko, S.;
- Podoskin, A.;
- Pikhtin, N.;
- Sokolova, Z.;
- Leshko, A.;
- Tarasov, I.
Publication type:
Article
Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 805, doi. 10.1134/S1063782610060199
By:
- Vinokurov, D. A.;
- Ladugin, M. A.;
- Lyutetskii, A. V.;
- Marmalyuk, A. A.;
- Petrunov, A. N.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Stankevich, A. L.;
- Fetisova, N. V.;
- Shashkin, I. S.;
- Averkiev, N. S.;
- Tarasov, I. S.
Publication type:
Article
Dissipation loss of mid-infrared radiation in a dielectric waveguide.
Published in:
Semiconductors, 2010, v. 44, n. 2, p. 243, doi. 10.1134/S1063782610020193
By:
- Averkiev, N. S.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Tarasov, I. S.
Publication type:
Article
High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures.
Published in:
Semiconductors, 2009, v. 43, n. 12, p. 1602, doi. 10.1134/S1063782609120057
By:
- Lyutetskiy, A. V.;
- Pikhtin, N. A.;
- Fetisova, N. V.;
- Leshko, A. Yu.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Ryaboshtan, Yu. A.;
- Marmalyuk, A. A.;
- Tarasov, I. S.
Publication type:
Article
Study of optical characteristics of structures with strongly strained In<sub> x</sub>Ga<sub>1 − x</sub>As quantum wells.
Published in:
Semiconductors, 2009, v. 43, n. 10, p. 1334, doi. 10.1134/S1063782609100133
By:
- Vinokurov, D. A.;
- Kapitonov, V. A.;
- Nikolaev, D. N.;
- Sokolova, Z. N.;
- Stankevich, A. L.;
- Shamakhov, V. V.;
- Tarasov, I. S.
Publication type:
Article
Dielectric waveguide for middle and far infrared radiation.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1036, doi. 10.1134/S1063782609080132
By:
- Averkiev, N. S.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Tarasov, I. S.
Publication type:
Article
Vaso-neuronal relations in the ganglionic layer of the retina in dogs exposed to gravitational overloads.
Published in:
Neuroscience & Behavioral Physiology, 1984, v. 14, n. 2, p. 118, doi. 10.1007/BF01185216
By:
- Sapin, M.;
- Sokolova, Z.;
- Klebanov, V.
Publication type:
Article
Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures.
Published in:
Semiconductors, 2009, v. 43, n. 1, p. 112, doi. 10.1134/S1063782609010229
By:
- Slipchenko, S. O.;
- Bondarev, A. D.;
- Vinokurov, D. A.;
- Nikolaev, D. N.;
- Fetisova, N. V.;
- Sokolova, Z. N.;
- Pikhtin, N. A.;
- Tarasov, I. S.
Publication type:
Article
Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions.
Published in:
Semiconductors, 2008, v. 42, n. 6, p. 737, doi. 10.1134/S1063782608060171
By:
- Vorob'ev, L. E.;
- Zerova, V. L.;
- Borshchev, K. S.;
- Sokolova, Z. N.;
- Tarasov, I. S.;
- Belenky, G.
Publication type:
Article
Contribution of Auger recombination to saturation of the light-current characteristics in high-power laser diodes (λ = 1.0–1.9 m m).
Published in:
Semiconductors, 2008, v. 42, n. 1, p. 104, doi. 10.1007/s11453-008-1015-z
By:
- Lyutetskiĭ, A.;
- Borshchev, K.;
- Pikhtin, N.;
- Slipchenko, S.;
- Sokolova, Z.;
- Tarasov, I.
Publication type:
Article
Double-band generation in quantum-well semiconductor laser at high injection levels.
Published in:
Semiconductors, 2007, v. 41, n. 10, p. 1230, doi. 10.1134/S1063782607100193
By:
- Vinokurov, D. A.;
- Zorina, S. A.;
- Kapitonov, V. A.;
- Leshko, A. Yu.;
- Lyutetskiǐ;, A. V.;
- Nalet, T. A.;
- Nikolaev, D. N.;
- Pikhtin, N. A.;
- Rudova, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Stankevich, A. L.;
- Fetisova, N. V.;
- Khomylev, M. A.;
- Shamakhov, V. V.;
- Borshchev, K. S.;
- Arsent'ev, I. N.;
- Bondarev, A. D.;
- Trukan, M. K.;
- Tarasov, I. S.
Publication type:
Article
Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation.
Published in:
Semiconductors, 2007, v. 41, n. 8, p. 984, doi. 10.1134/S1063782607080234
By:
- Vinokurov, D. A.;
- Kapitonov, V. A.;
- Lyutetskiĭ, A. V.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Stankevich, A. L.;
- Khomylev, M. A.;
- Shamakhov, V. V.;
- Borshchev, K. S.;
- Arsent'ev, I. N.;
- Tarasov, I. S.
Publication type:
Article
Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures.
Published in:
Semiconductors, 2007, v. 41, n. 3, p. 361, doi. 10.1134/S1063782607030220
By:
- Averkiev, N. S.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Pikhtin, N. A.;
- Tarasov, I. S.
Publication type:
Article
Finite time of carrier energy relaxation as a cause of optical-power limitation in semiconductor lasers.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 990, doi. 10.1134/S1063782606080197
By:
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Pikhtin, N. A.;
- Borschev, K. S.;
- Vinokurov, D. A.;
- Tarasov, I. S.
Publication type:
Article
High-power lasers (λ = 940–980 nm) based on asymmetric GaInAs/GaInAsP/AlGaAs separate-confinement heterostructure.
Published in:
Semiconductors, 2006, v. 40, n. 6, p. 745, doi. 10.1134/S1063782606060224
By:
- Vinokurov, D. A.;
- Stankevich, A. L.;
- Shamakhov, V. V.;
- Kapitonov, V. A.;
- Leshko, A. Yu.;
- Lyutetskiĭ, A. V.;
- Nikolaev, D. N.;
- Pikhtin, N. A.;
- Rudova, N. A.;
- Sokolova, Z. N.;
- Slipchenko, S. O.;
- Khomylev, M. A.;
- Tarasov, I. S.
Publication type:
Article
High-Power Laser Diodes Based on Asymmetric Separate-Confinement Heterostructures.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 370, doi. 10.1134/1.1882804
By:
- Vinokurov, D. A.;
- Zorina, S. A.;
- Kapitonov, V. A.;
- Murashova, A. V.;
- Nikolaev, D. N.;
- Stankevich, A. L.;
- Khomylev, M. A.;
- Shamakhov, V. V.;
- Leshko, A. Yu.;
- Lyutetski&icaron;, A. V.;
- Nalyot, T. A.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Fetisova, N. V.;
- Tarasov, I. S.
Publication type:
Article
Ultralow Internal Optical Loss in Separate-Confinement Quantum-Well Laser Heterostructures.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1430, doi. 10.1134/1.1836066
By:
- Slipchenko, S. O.;
- Vinokurov, D. A.;
- Pikhtin, N. A.;
- Sokolova, Z. N.;
- Stankevich, A. L.;
- Tarasov, I. S.;
- Alferov, Zh. I.
Publication type:
Article
Internal Optical Loss in Semiconductor Lasers.
Published in:
Semiconductors, 2004, v. 38, n. 3, p. 360, doi. 10.1134/1.1682615
By:
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Tarasov, I. S.
Publication type:
Article
1.7–1.8μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1356, doi. 10.1134/1.1626224
By:
- Lyutetski&ibreve;, A. V.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Fetisova, N. V.;
- Leshko, A. Yu.;
- Shamakhov, V. V.;
- Andreev, A. Yu.;
- Golikova, E. G.;
- Ryaboshtan, Yu. A.;
- Tarasov, I. S.
Publication type:
Article
High Power Single-Mode (λ = 1.3–1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures.
Published in:
Semiconductors, 2002, v. 36, n. 11, p. 1308, doi. 10.1134/1.1521236
By:
- Leshko, A. Yu.;
- Lyutetskiı, A. V.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Fetisova, N. V.;
- Golikova, E. G.;
- Ryaboshtan, Yu. A.;
- Tarasov, I. S.
Publication type:
Article
Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers.
Published in:
Semiconductors, 2002, v. 36, n. 3, p. 344, doi. 10.1134/1.1461415
By:
- Pikhtin, N. A.;
- Sliptchenko, S. O.;
- Sokolova, Z. N.;
- Tarasov, I. S.
Publication type:
Article
MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes.
Published in:
Semiconductors, 2001, v. 35, n. 11, p. 1324, doi. 10.1134/1.1418080
By:
- Vinokurov, D. A.;
- Kapitonov, V. A.;
- Nikolaev, D. N.;
- Stankevich, A. L.;
- Lyutetskiı, A. V.;
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Fetisova, N. V.;
- Arsent’ev, I. N.;
- Tarasov, I. S.
Publication type:
Article
Optical Study of InP Quantum Dots.
Published in:
Semiconductors, 2001, v. 35, n. 2, p. 235, doi. 10.1134/1.1349939
By:
- Vinokurov, D. A.;
- Kapitonov, V. A.;
- Nikolaev, D. N.;
- Sokolova, Z. N.;
- Tarasov, I. S.
Publication type:
Article
On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1397, doi. 10.1134/1.1331798
By:
- Leshko, A. Yu.;
- Lyutetskiı, A. V.;
- Pikhtin, N. A.;
- Skrynnikov, G. V.;
- Sokolova, Z. N.;
- Tarasov, I. S.;
- Fetisova, N. V.
Publication type:
Article
InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5-1.9μm).
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1007, doi. 10.1134/1.1187826
By:
- Sokolova, Z. N.;
- Vinokurov, D. A.;
- Tarasov, I. S.;
- Gun’ko, N. A.;
- Zegrya, G. G.
Publication type:
Article
Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 788, doi. 10.1134/1.1187782
By:
- Vinokurov, D. A.;
- Kapitonov, V. A.;
- Kovalenkov, O. V.;
- Livshits, D. A.;
- Sokolova, Z. N.;
- Tarasov, I. S.;
- Alferov, Zh. I.
Publication type:
Article
Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1204
By:
- Gun’ko, N. A.;
- Zegrya, G. G.;
- Zotova, N. V.;
- Sokolova, Z. N.;
- Stus’, N. M.;
- Khalfin, V. B.
Publication type:
Article
Evolution of light-current characteristic shape in high-power semiconductor quantum well lasers.
Published in:
Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 9, p. 550, doi. 10.1049/el.2019.0225
By:
- Sokolova, Z. N.;
- Pikhtin, N. A.;
- Asryan, L. V.
Publication type:
Article

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