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- Title
Analysis of the Threshold Conditions and Lasing Efficiency of Internally Circulating Modes in Large Rectangular Cavities Based on AlGaAs/GaAs/InGaAs Laser Heterostructures.
- Authors
Podoskin, A. A.; Romanovich, D. N.; Shashkin, I. S.; Gavrina, P. S.; Sokolova, Z. N.; Slipchenko, S. O.; Pikhtin, N. A.
- Abstract
The threshold conditions and operating efficiency of a semiconductor laser emitter with a large rectangular cavity (1 × 1 mm) based on an AlGaAs/GaAs/InGaAs heterostructure for high-power stripe lasers, which operate on high-Q internally circulating structures are estimated. Two designs of emitters with different characteristics of the laser-radiation propagation regions are proposed, and the possibility of achieving a differential efficiency that is characteristic of high-power stripe lasers (more than 70%) is shown.
- Subjects
INDIUM gallium arsenide; GALLIUM arsenide; AUDITING standards; SEMICONDUCTOR lasers; HETEROSTRUCTURES; ACTIVE medium; LASERS
- Publication
Semiconductors, 2021, Vol 55, Issue 5, p518
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782621050134