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ELECTRON STRUCTURE INVESTIGATIONS OF InGaP/GaAs(100) HETEROSTRUCTURES WITH InP QUANTUM DOTS.
Published in:
International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 215, doi. 10.1142/S0219581X07004468
By:
- DOMASHEVSKAYA, E. P.;
- TEREKHOV, V. A.;
- KASHKAROV, V. M.;
- YU. TURISHCHEV, S.;
- MOLODTSOV, S. L.;
- VYALIKH, D. V.;
- ARSENTYEV, I. N.;
- TARASOV, I. S.;
- VINOKUROV, D. A.;
- STANKEVICH, A. L.
Publication type:
Article
X-ray and x-ray electron spectroscopy of new materials.
Published in:
Journal of Structural Chemistry, 2017, v. 58, n. 6, p. 1057, doi. 10.1134/S0022476617060014
By:
- Vovna, V.;
- Domashevskaya, E.;
- Okotrub, A.
Publication type:
Article
XPS study of the oxidation of nanosize Ni/Si(100) films.
Published in:
Journal of Structural Chemistry, 2011, v. 52, p. 115, doi. 10.1134/S002247661107016X
By:
- Domashevskaya, É.;
- Ryabtsev, S.;
- Terekhov, V.;
- Len'shin, A.;
- Chernyshov, F.;
- Kazakov, A.;
- Sidashov, A.
Publication type:
Article
Influence of the Crystal Structure of the Nucleus on the Morphology of t-ZnO Tetrapods.
Published in:
Crystallography Reports, 2019, v. 64, n. 2, p. 212, doi. 10.1134/S1063774519020032
By:
- Avilov, S. V.;
- Tuchin, A. V.;
- Shebanov, A. N.;
- Domashevskaya, E. P.
Publication type:
Article
“Formation of Tin oxides in thin-film Sn/C/KCl(100) structures”.
Published in:
2009
By:
- Yurakov, Yu.;
- Ryabtsev, S.;
- Chuvenkova, O.;
- Domashevskaya, E.;
- Nikitenko, A.;
- Kanykin, S.;
- Kushchev, S.
Publication type:
Correction notice
The formation of tin oxides in thin-film Sn/C/KCl(100) structures.
Published in:
Crystallography Reports, 2009, v. 54, n. 1, p. 110, doi. 10.1134/S1063774509010192
By:
- Yurakov, Yu.;
- Ryabtsev, S.;
- Chuvenkova, O.;
- Domashevskaya, E.;
- Nikitenko, A.;
- Kannykin, S.;
- Kushchev, S.
Publication type:
Article
Low-Energy Oscillations in the E[sub 0] Photoreflectance Spectra of Homoepitaxial n-GaAs/n[sup +]-GaAs Samples with n = 10[sup 15]–10[sup 16]cm[sup –3] and n[sup +]approx. 10[sup 18]cm[sup –3].
Published in:
Optics & Spectroscopy, 2000, v. 89, n. 4, p. 549, doi. 10.1134/1.1319915
By:
- Kuz’menko, R. V.;
- Ganzha, A.V.;
- Domashevskaya, É. P.
Publication type:
Article
USXES and Optical Phenomena in Si Low-Dimensional Structures Dependent on Morphology and Silicon Oxide Composition on Si Surface.
Published in:
Surface Review & Letters, 2002, v. 9, n. 2, p. 1047, doi. 10.1142/S0218625X02003329
By:
- Torchynska, T. V.;
- Morales Rodriguez, M.;
- Polupan, G. P.;
- Khomenkova, L. I.;
- Korsunskaya, N. E.;
- Papusha, V. P.;
- Scherbina, L. V.;
- Domashevskaya, E. P.;
- Terekhov, V. A.;
- Turischev, S. Yu.
Publication type:
Article
On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure.
Published in:
Semiconductors, 2019, v. 53, n. 7, p. 923, doi. 10.1134/S106378261907008X
By:
- Domashevskaya, E. P.;
- Goloshchapov, D. L.;
- Dambos, Al Khailani Hasan Ismail;
- Rudnev, E. V.;
- Grechkina, M. V.;
- Ryabtsev, S. V.
Publication type:
Article
Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO/insulator structures from the results of synchrotron investigations.
Published in:
Semiconductors, 2017, v. 51, n. 3, p. 349, doi. 10.1134/S1063782617030241
By:
- Turishchev, S.;
- Terekhov, V.;
- Koyuda, D.;
- Ershov, A.;
- Mashin, A.;
- Parinova, E.;
- Nesterov, D.;
- Grachev, D.;
- Karabanova, I.;
- Domashevskaya, E.
Publication type:
Article
Deep Centers at the Interface in InGaTe/InAs and InTe/InAs Heterostructures.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 309, doi. 10.1134/S1063782616030076
By:
- Domashevskaya, E.;
- Mikhailyuk, E.;
- Prokopova, T.;
- Bezryadin, N.
Publication type:
Article
On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin.
Published in:
Semiconductors, 2016, v. 50, n. 2, p. 180, doi. 10.1134/S1063782616020214
By:
- Ryabtsev, S.;
- Chuvenkova, O.;
- Kannykin, S.;
- Popov, A.;
- Ryabtseva, N.;
- Voischev, S.;
- Turishchev, S.;
- Domashevskaya, E.
Publication type:
Article
Composition and optical properties of amorphous a-SiO:H films with silicon nanoclusters.
Published in:
Semiconductors, 2016, v. 50, n. 2, p. 212, doi. 10.1134/S1063782616020251
By:
- Terekhov, V.;
- Terukov, E.;
- Undalov, Yu.;
- Parinova, E.;
- Spirin, D.;
- Seredin, P.;
- Minakov, D.;
- Domashevskaya, E.
Publication type:
Article
Formation of Si nanocrystals in multilayered nanoperiodic AlO/SiO/AlO/SiO/.../Si(100) structures: Synchrotron and photoluminescence data.
Published in:
Semiconductors, 2015, v. 49, n. 3, p. 409, doi. 10.1134/S1063782615030227
By:
- Turishchev, S.;
- Terekhov, V.;
- Koyuda, D.;
- Spirin, D.;
- Parinova, E.;
- Nesterov, D.;
- Grachev, D.;
- Karabanova, I.;
- Ershov, A.;
- Mashin, A.;
- Domashevskaya, E.
Publication type:
Article
Specific features of the sol-gel formation and optical properties of 3 d metal/porous silicon composites.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 551, doi. 10.1134/S1063782614040174
By:
- Lenshin, A.;
- Seredin, P.;
- Minakov, D.;
- Kashkarov, V.;
- Agapov, B.;
- Domashevskaya, E.;
- Kononova, I.;
- Moshnikov, V.;
- Terebova, N.;
- Shabanova, I.
Publication type:
Article
Synchrotron study of the formation of nanoclusters in Al2O3/SiOx/Al2O3/SiOx/…/Si(100) multilayer nanostructures.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1316, doi. 10.1134/S106378261310028X
By:
- Turishchev, S. Yu.;
- Terekhov, V. A.;
- Koyuda, D. A.;
- Pankov, K. N.;
- Ershov, A. V.;
- Grachev, D. A.;
- Mashin, A. I.;
- Domashevskaya, E. P.
Publication type:
Article
Properties of epitaxial (AlGaAs)C alloys grown by MOCVD autoepitaxy.
Published in:
Semiconductors, 2013, v. 47, n. 1, p. 7, doi. 10.1134/S1063782613010211
By:
- Seredin, P.;
- Domashevskaya, E.;
- Arsentyev, I.;
- Vinokurov, D.;
- Stankevich, A.
Publication type:
Article
Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on n-type substrates with an epitaxially deposited p-layer.
Published in:
Semiconductors, 2012, v. 46, n. 8, p. 1079, doi. 10.1134/S1063782612080131
By:
- Lenshin, A.;
- Kashkarov, V.;
- Seredin, P.;
- Minakov, D.;
- Agapov, B.;
- Kuznetsova, M.;
- Moshnikov, V.;
- Domashevskaya, E.
Publication type:
Article
Structural and spectral features of MOCVD AlGaInAsP/GaAs (100) alloys.
Published in:
Semiconductors, 2012, v. 46, n. 6, p. 719, doi. 10.1134/S106378261206019X
By:
- Seredin, P.;
- Glotov, A.;
- Domashevskaya, E.;
- Lenshin, A.;
- Smirnov, M.;
- Arsentyev, I.;
- Vinokurov, D.;
- Stankevich, A.;
- Tarasov, I.
Publication type:
Article
Spinodal decomposition of GaInAsP quaternary alloys.
Published in:
Semiconductors, 2011, v. 45, n. 11, p. 1433, doi. 10.1134/S1063782611110236
By:
- Seredin, P.;
- Glotov, A.;
- Ternovaya, V.;
- Domashevskaya, E.;
- Arsentyev, I.;
- Vavilova, L.;
- Tarasov, I.
Publication type:
Article
Effect of silicon on relaxation of the crystal lattice in MOCVD-hydride AlGaAs:Si/GaAs(100) heterostructures.
Published in:
Semiconductors, 2011, v. 45, n. 4, p. 481, doi. 10.1134/S106378261104021X
By:
- Seredin, P.;
- Glotov, A.;
- Ternovaya, V.;
- Domashevskaya, E.;
- Arsentyev, I.;
- Vinokurov, D.;
- Stankevich, A.;
- Tarasov, I.
Publication type:
Article
Relaxation of crystal lattice parameters and structural ordering in InGaAs epitaxial alloys.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1106, doi. 10.1134/S1063782610080270
By:
- Seredin, P. V.;
- Glotov, A. V.;
- Domashevskaya, E. P.;
- Arsentyev, I. N.;
- Vinokurov, D. A.;
- Stankevich, A. L.;
- Tarasov, I. S.
Publication type:
Article
The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures.
Published in:
Semiconductors, 2010, v. 44, n. 2, p. 184, doi. 10.1134/S1063782610020089
By:
- Seredin, P. V.;
- Glotov, A. V.;
- Domashevskaya, E. P.;
- Arsentyev, I. N.;
- Vinokurov, D. A.;
- Tarasov, I. S.;
- Zhurbina, I. A.
Publication type:
Article
Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions.
Published in:
Semiconductors, 2009, v. 43, n. 12, p. 1610, doi. 10.1134/S1063782609120070
By:
- Seredin, P. V.;
- Glotov, A. V.;
- Domashevskaya, E. P.;
- Arsentyev, I. N.;
- Vinokurov, D. A.;
- Stankevich, A. L.;
- Tarasov, I. S.
Publication type:
Article
Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga xIn1 − xP/GaAs(100) heterostructures.
Published in:
Semiconductors, 2009, v. 43, n. 9, p. 1221, doi. 10.1134/S106378260909022X
By:
- Seredin, P. V.;
- Domashevskaya, E. P.;
- Rudneva, Val. E.;
- Rudneva, V. E.;
- Gordienko, N. N.;
- Glotov, A. V.;
- Arsentyev, I. N.;
- Vinokurov, D. A.;
- Stankevich, A. L.;
- Tarasov, I. S.
Publication type:
Article
The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1098, doi. 10.1134/S1063782609080247
By:
- Seredin, P. V.;
- Gordienko, N. N.;
- Glotov, A. V.;
- Zhurbina, I. A.;
- Domashevskaya, E. P.;
- Arsent'ev, I. N.;
- Shishkov, M. V.
Publication type:
Article
Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers.
Published in:
Semiconductors, 2008, v. 42, n. 9, p. 1055, doi. 10.1134/S1063782608090108
By:
- Seredin, P. V.;
- Domashevskaya, É. P.;
- Lukin, A. N.;
- Arsent'ev, I. N.;
- Vinokurov, D. A.;
- Tarasov, I. S.
Publication type:
Article
Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga x In1 − x As y P1 − y /GaInP/GaAs(001) heterostructures.
Published in:
Semiconductors, 2008, v. 42, n. 9, p. 1069, doi. 10.1134/S1063782608090121
By:
- Domashevskaya, E. P.;
- Gordienko, N. N.;
- Rumyantseva, N. A.;
- Agapov, B. L.;
- Seredin, P. V.;
- Bityutskaya, L. A.;
- Arsent'ev, I. N.;
- Vavilova, L. S.;
- Tarasov, I. S.
Publication type:
Article
Kinetics of resistive response of SnO2 − x thin films in gas environment.
Published in:
Semiconductors, 2008, v. 42, n. 4, p. 481, doi. 10.1134/S1063782608040192
By:
- Ryabtsev, S.;
- Yukish, A.;
- Khango, S.;
- Yurakov, Yu.;
- Shaposhnik, A.;
- Domashevskaya, É.
Publication type:
Article
Infrared reflectance spectra and morphologic features of the surface of epitaxial AlxGa1− x As/GaAs(100) heterostructures with the ordered AlGaAs2 phase.
Published in:
Semiconductors, 2006, v. 40, n. 4, p. 406, doi. 10.1134/S1063782606040075
By:
- Domashevskaya, É.;
- Seredin, P.;
- Lukin, A.;
- Bityutskaya, L.;
- Grechkina, M.;
- Arsent'ev, I.;
- Vinokurov, D.;
- Tarasov, I.
Publication type:
Article
A Study of the Local Electronic and Atomic Structure in a-SixC1 – x Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 830, doi. 10.1134/1.1992643
By:
- Terekhov, V. A.;
- Terukov, E. I.;
- Trapeznikova, I. N.;
- Kashkarov, V. M.;
- Kurilo, O. V.;
- Turishchev, S. Yu.;
- Golodenko, A. B.;
- Domashevskaya, É. P.
Publication type:
Article
Vegard’s Law and Superstructural Phases in AlxGa1 – xAs/GaAs(100) Epitaxial Heterostructures.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 336, doi. 10.1134/1.1882797
By:
- Domashevskaya, É. P.;
- Seredin, P. V.;
- Dolgopolova, É. A.;
- Zanin, I. E.;
- Arsent'ev, I. N.;
- Vinokurov, D. A.;
- Stankevich, A. L.;
- Tarasov, I. S.
Publication type:
Article
Influence of Ultrashort Pulses of Electromagnetic Radiation on Parameters of Metal–Insulator–Semiconductor Structures.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1390, doi. 10.1134/1.1836058
By:
- Terekhov, V. A.;
- Man'ko, A. N.;
- Bormontov, E. N.;
- Levchenko, V. N.;
- Trebunskikh, S. Yu.;
- Tutov, E. A.;
- Domashevskaya, E´. P.
Publication type:
Article
Combined Photoreflectance/Photoluminescence Studies of the Stability of Semiconductor Surface Passivation.
Published in:
Technical Physics, 2002, v. 47, n. 2, p. 224, doi. 10.1134/1.1451971
By:
- Kuz’menko, R. V.;
- Ganzha, A. V.;
- Domashevskaya, É. P.;
- Ryasnoı, P. V.
Publication type:
Article
Density of States and Photoconductivity of Hydrogenated Amorphous Silicon.
Published in:
Physica Status Solidi (B), 1986, v. 138, n. 2, p. 647, doi. 10.1002/pssb.2221380229
By:
- Terekhov, V. A.;
- Trostyanskii, S. N.;
- Domashevskaya, E. P.;
- Golikova, O. A.;
- Mezdrogina, M. M.;
- Sorokina, K. L.;
- Kazanin, M. M.
Publication type:
Article
Integration over the Two-Dimensional Brillouin Zone.
Published in:
Physica Status Solidi (B), 1985, v. 129, n. 1, p. 293, doi. 10.1002/pssb.2221290129
By:
- Kurganskii, S. I.;
- Dubrovskii, O. I.;
- Domashevskaya, E. P.
Publication type:
Article
Local-Density-Functional Approximation to the Energy Band Structure of TmS Using the Self-Consistent Relativistic Linearized-Augmented-Planc-Wave Method.
Published in:
Physica Status Solidi (B), 1984, v. 121, n. 1, p. 241, doi. 10.1002/pssb.2221210126
By:
- Farberovich, O. V.;
- Nizhnikova, G. P.;
- Vlasov, S. V.;
- Domashevskaya, E. P.
Publication type:
Article
Role of Noble Metal d-States in the Formation of the Electron Structure of Ternary Sulphides.
Published in:
Physica Status Solidi (B), 1981, v. 106, n. 2, p. 429, doi. 10.1002/pssb.2221060202
By:
- Domashevskaya, E. P.;
- Marshakova, L. N.;
- Terekhov, V. A.;
- Lukin, A. N.;
- Ugai, Ya. A.;
- Nefedov, V. I.;
- Salyn, Ya. V.
Publication type:
Article
d-s, p Resonance and Electronic Structure of Compounds, Alloys, and Solid Solutions.
Published in:
Physica Status Solidi (B), 1981, v. 105, n. 1, p. 121, doi. 10.1002/pssb.2221050113
By:
- Domashevskaya, E. P.;
- Terekhov, V. A.
Publication type:
Article
Problems of the OPW Method. II. Calculation of the Band Structure of ZnS and CdS.
Published in:
Physica Status Solidi (B), 1980, v. 97, n. 2, p. 631, doi. 10.1002/pssb.2220970230
By:
- Farberovich, O. V.;
- Kurganskii, S. I.;
- Domashevskaya, E. P.
Publication type:
Article
Problems of the OPW method. I. Transition metals.
Published in:
Physica Status Solidi (B), 1979, v. 94, n. 1, p. 51, doi. 10.1002/pssb.2220940105
By:
- Farberovich, O. V.;
- Kurganskii, S. I.;
- Domashevskaya, E. P.
Publication type:
Article
Band structure and density of states in SiP2.
Published in:
Physica Status Solidi (B), 1975, v. 72, n. 2, p. 661, doi. 10.1002/pssb.2220720224
By:
- Farberovich, O. V.;
- Domashevskaya, E. P.
Publication type:
Article
Synchrotron investigation of the multilayer nanoperiodical Al2O3/SiO/Al2O3/SiO...Si structure formation Synchrotron investigation of the multilayer nanoperiodical Al2O3/SiO/Al2O3/SiO...Si structure formation
Published in:
Surface & Interface Analysis: SIA, 2012, v. 44, n. 8, p. 1182, doi. 10.1002/sia.4868
By:
- Turishchev, S. Yu.;
- Terekhov, V. A.;
- Koyuda, D. A.;
- Pankov, K. N.;
- Domashevskaya, E. P.;
- Ershov, A. V.;
- Chugrov, I. A.;
- Mashin, A. I.
Publication type:
Article
Optical properties of SnO2− x nanolayers.
Published in:
Technical Physics Letters, 2006, v. 32, n. 9, p. 782, doi. 10.1134/S1063785006090148
By:
- Domashevskaya, É. P.;
- Ryabtsev, S. V.;
- Tutov, E. A.;
- Yurakov, Yu. A.;
- Chuvenkova, O. A.;
- Lukin, A. N.
Publication type:
Article
Variations of the optical characteristics of nano-, meso-, and macroporous silicon with time.
Published in:
Technical Physics, 2015, v. 60, n. 7, p. 1096, doi. 10.1134/S1063784215070166
By:
- Len'shin, A.;
- Kashkarov, V.;
- Seredin, P.;
- Minakov, D.;
- Domashevskaya, E.
Publication type:
Article
Optical characteristics of porous silicon structures.
Published in:
Technical Physics, 2014, v. 59, n. 2, p. 224, doi. 10.1134/S1063784214020145
By:
- Len'shin, A.;
- Kashkarov, V.;
- Seredin, P.;
- Agapov, B.;
- Minakov, D.;
- Tsipenyuk, V.;
- Domashevskaya, E.
Publication type:
Article
Structural and optical properties of porous silicon prepared from a p-epitaxial layer on n-Si(111).
Published in:
Technical Physics, 2013, v. 58, n. 3, p. 404, doi. 10.1134/S1063784213030171
By:
- Len'shin, A.;
- Kashkarov, V.;
- Minakov, D.;
- Agapov, B.;
- Domashevskaya, E.;
- Ratnikov, V.;
- Sorokin, L.
Publication type:
Article
Optical properties of porous silicon processed in tetraethyl orthosilicate.
Published in:
Technical Physics, 2013, v. 58, n. 2, p. 284, doi. 10.1134/S1063784213020151
By:
- Len'shin, A.;
- Kashkarov, V.;
- Tsipenyuk, V.;
- Seredin, P.;
- Agapov, B.;
- Minakov, D.;
- Domashevskaya, E.
Publication type:
Article
Influence of natural aging on photoluminescence from porous silicon.
Published in:
Technical Physics, 2012, v. 57, n. 2, p. 305, doi. 10.1134/S1063784212020156
By:
- Len'shin, A.;
- Kashkarov, V.;
- Turishchev, S.;
- Smirnov, M.;
- Domashevskaya, E.
Publication type:
Article
Interference phenomena of synchrotron radiation in TEY spectra for silicon-on-insulator structure.
Published in:
Journal of Synchrotron Radiation, 2012, v. 19, n. 4, p. 609, doi. 10.1107/S0909049512022844
By:
- Andreeva, M. A.;
- Domashevskaya, E. P.;
- Odintsova, E. E.;
- Terekhov, V. A.;
- Turishchev, S. Yu.
Publication type:
Article

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