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- Title
High-insulating β-Ga<sub>2</sub>O<sub>3</sub> thin films by doping with a valence controllable Fe element.
- Authors
Huang, Yuanqi; Wu, Han; Zhi, Yusong; Huang, Yalei; Guo, Daoyou; Wu, Zhenping; Li, Peigang; Chen, Zhengwei; Tang, Weihua
- Abstract
Owing a much higher breakdown field (8 MV/cm) and Baliga’s figure-of-merit (3444) than other hot wide bandgap semiconductor materials such as 4H-SiC and GaN, β-Ga2O3 is regarded as a new promising candidate for high-power electronic applications. The highest electrical breakdown strength (3.8 MV/cm) of metal-oxide-semiconductor field-effect transistors (MOSFET) is demonstrated by the Air Force Research Laboratory, which has a 20 nm Al2O3 gate dielectric and a sub-micron gate-drain spacing of 0.6 µm. Among the device structure, the interface control between channel and gate is a key factor for MOSFET. The better the lattice matching between the gate and the channel layers, the better the interface structure between them will be. In this paper, Fe-doped β-Ga2O3 thin films have been grown at various substrate temperatures and oxygen partial pressures. The resistance increases markedly compared with pure β-Ga2O3, exhibiting the characteristic of high insulation. This study suggests that Fe-doped β-Ga2O3 thin film can be used as homogeneous epitaxial gate dielectric material to fabricate Ga2O3-based high-power devices.
- Subjects
THIN films; BAND gaps; SEMICONDUCTOR materials; METAL oxide semiconductor field-effect transistors; PARTIAL pressure; DIELECTRIC materials
- Publication
Applied Physics A: Materials Science & Processing, 2018, Vol 124, Issue 9, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-018-2037-z