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- Title
Fabrication of Multi-Bit SRAMs Using Quantum Dot Channel (QDC)-Quantum Dot Gate (QDG) FET.
- Authors
Gudlavalleti, Raja Hari; Goosen, Jacques; Liu, Tao; Bradley, Hunter; Parent, Elisa; Almalki, Abdulmajeed; Perez, Erik; Jain, Faquir
- Abstract
This paper presents fabrication of multi-state inverters incorporating SiOx-cladded Si quantum dot in the channel and gate region of driver, load, and access transistors. Experimental characteristics are presented exhibiting 3-state behavior in Quantum-dot Channel (QDC)-Quantum-dot Gate (QDG) FETs having Si quantum dots. It is shown that QDC-QDG-FETs-based enhancement mode inverter configurations are the building blocks of a multi-bit static random access memory (SRAM). QDC-QDG-FETs exhibiting four states can also be used to implement compact 4-state logic and nonvolatile memories or random access nonvolatile memories.
- Subjects
NONVOLATILE random-access memory; QUANTUM dots; RANDOM access memory; STATIC random access memory
- Publication
International Journal of High Speed Electronics & Systems, 2023, Vol 32, Issue 2-4, p1
- ISSN
0129-1564
- Publication type
Article
- DOI
10.1142/S0129156423500179