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- Title
VA 族元素修饰对二维 AIN 电磁性质调控的理论研究.
- Authors
莫秋燕; 陈广萍; 张颂; 荆涛; 吴家隐
- Abstract
The first principles calculation method based on density functional theory was used to study the influ- ence of VA group elements (N, P, As, Sh, Bi) on the electronic and magnetic properties of two-dimensional AIN. Research has found that after modification with VA group elements, the band structure of two-dimensional AIN undergoes significant cleavage, indicating a transformation of the system into a magnetic material. At the same time, the bottom of the conduction band moves towards the low-energy region, causing the absorption threshold of two-dimensional AIN to expand from the ultraviolet region to the visible light region. Therefore, the modification of VA group elements significantly regulates the electronic structure and magnetism of two-dimen- sional AIN, providing new ideas and possibilities for achieving visible light responsive optoelectronic and spin e- lectronic devices
- Publication
Journal of Atomic & Molecular Physics (1000-0364), 2025, Vol 42, Issue 6, p1
- ISSN
1000-0364
- Publication type
Article
- DOI
10.19855/j.1000-0364.2025.066003