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- Title
A temperature stable microwave dielectric material NiZnTiNbO.
- Authors
Cai, Haocheng; Li, Lingxia; Sun, Hao; Gao, Zhengdong; Lv, Xiaosong
- Abstract
A temperature stable, high quality, low sintering temperature microwave dielectric material NiZnTiNbO was investigated for the first time. The compounds were prepared by a conventional mixed-oxide route and sintered at the temperature range of 1,060-1,140 °C. The microstructure and microwave dielectric properties were investigated systematically. The X-ray diffraction results show that the NiZnTiNbO ceramics contained two phase: ZnTiNbO phase and ZnNbTiO phase. With increase in temperature, the amount of ZnTiNbO phase decreased and that of ZnNbTiO increased. The microwave dielectric properties of NiZnTiNbO were mainly affected by the variation of content and crystal structure of each phase. With increasing temperature, the content of ZnNbTiO phase increased, resulting in the increasing dielectric constant and τ, and decreasing Qf value. In addition, the dielectric constant increased with increasing bulk density, the Qf value were related to the cell volume of each phase, and the τ value had correlation with the bond valence of each phase. Outstanding microwave dielectric properties of ε = 40.9, Qf = 40,870 GHz, especially near-zero τ = 0.62 × 10/°C were obtained sintered at 1,100 °C for 6 h. With the relatively low sintering temperature and excellent dielectric properties in microwave range, this material is very promising for electronic devices application.
- Subjects
DIELECTRIC materials; MICROWAVE materials; ELECTRONIC equipment; SINTERING; CRYSTAL structure; PERMITTIVITY measurement; TELECOMMUNICATION
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 2, p998
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-014-2495-9