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- Title
Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate.
- Authors
Tanaka, Tooru; Saito, Katsuhiko; Nishio, Mitsuhiro; Qixin Guo; Ogawa, Hiroshi
- Abstract
ZnTe light emitting diodes (LEDs) were successfully fabricated with an Al/ n-ZnTe/ p-ZnTe/ p-ZnMgTe/Pd structure by the thermal diffusion of Al into p-ZnTe epitaxial layers on p-ZnMgTe (100) substrates. The p-ZnTe layers were grown by metalorganic vapor phase epitaxy on Bridgman-grown p-ZnMgTe (100) substrates. The surface of the p-ZnTe epilayers was converted into n-type by the thermal diffusion of Al, in order to fabricate a pn-junction LED. The electroluminescence peak at room temperature approached a wavelength corresponding to the band-edge of ZnTe with decreasing thickness of the p-ZnTe epilayer. Therefore, p-ZnMgTe is a promising substrate for the fabrication of ZnTe LEDs.
- Subjects
LIGHT emitting diodes; SEMICONDUCTOR diodes; ELECTROLUMINESCENT devices; LIGHT sources; OPTICAL communications; DIFFUSION; SOLUTION (Chemistry); PHYSICS; SEPARATION (Technology); SOLID solutions
- Publication
Journal of Materials Science: Materials in Electronics, 2009, Vol 20, p505
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-008-9691-4