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- Title
Analysis of the actual schottky-barrier contact model in a wide temperature and bias-voltage range.
- Authors
Boshkov, V. G.; Ziatzev, S. E.
- Abstract
We numerically study the model of an actual metal-semiconductor Schottky-barrier contact with an interfacial layer and surface states (the Bardeen model). Our study is based on the previously developed view that the anomalies of the characteristics of such a contact is a consequence of the nonlinear dependence of the barrier height on the bias voltage. It is shown that on this basis it is possible to explain in a natural way the so-called “low-temperature anomaly” in metal-semiconductor Schottky-barrier contacts (an increase in the ideality factor of the current-voltage characteristic and a decrease in the measured barrier height with decreasing temperature), as well as the relationship between different barrier heights characterizing a contact, namely, among the actual barrier height, which is measured from a saturation current, the .at-band barrier height, and the barrier height measured from a C - V characteristic.
- Subjects
SCHOTTKY barrier diodes; SEMICONDUCTOR diodes; SEMICONDUCTOR-metal boundaries; ELECTRIC contacts; SEMICONDUCTORS
- Publication
Radiophysics & Quantum Electronics, 2004, Vol 47, Issue 9, p688
- ISSN
0033-8443
- Publication type
Article
- DOI
10.1007/s11141-005-0006-9