We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Memristive switching behaviour in In<sub>2</sub>Te<sub>5</sub> asymmetrical hetero-structures.
- Authors
Yafei Yuan; Jing Li
- Abstract
On the basis of Ag/In2Te5/W asymmetrical hetero-structures, the memristive samples were prepared by the magnetron sputtering method. The current--voltage (I-V) measurements show the bipolar resistive switching characteristics at the room temperature. The underlying mechanism can be well interpreted by the space--charge-limited conduction effect with redistribution and migration of charged defects responsible for the switching effect. The memristive possesses the properties of reversible switching, reproducible resistance, nondestructive readout, good cycling performance and non-volatile. It seems to be a promising candidate in the prospective non-volatile memory and neuromorphic circuit applications.
- Subjects
SWITCHING in amorphous semiconductors; MAGNETRON sputtering; TEMPERATURE; HETEROSTRUCTURES; NEUROMORPHICS
- Publication
Electronics Letters (Wiley-Blackwell), 2018, Vol 54, Issue 3, p169
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2017.2993