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- Title
Reduction of NEP variations for terahertz detectors using Schottky barrier diodes in CMOS.
- Authors
Kim, D. Y.; K. O., Kenneth
- Abstract
Variations of low-frequency noise including flicker and Lorentzian spectra are the dominant source of variation of noise equivalent power (NEP) for terahertz detectors using diode-connected N-type MOS (NMOS) transistors. The low-frequency noise of Schottky diodes fabricated in the same CMOS process as the NMOS detectors are dominated by generation and recombination noise. At 1 MHz modulation frequency, the noise of Schottky barrier diodes (SBDs) and its variation are ~2× lower than those of diode-connected NMOS transistors. It should be possible to reduce the variation of NEP by ~2× using Schottky diode detectors modulated at 1 MHz.
- Subjects
SUBMILLIMETER wave detectors; COMPLEMENTARY metal oxide semiconductors; SCHOTTKY barrier diodes; ELECTRONIC modulation; MODULATION theory
- Publication
Electronics Letters (Wiley-Blackwell), 2017, Vol 53, Issue 11, p732
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2017.0068