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- Title
Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers.
- Authors
Bak, Jun Yong; Kang, Youngho; Yang, Shinhyuk; Ryu, Ho-Jun; Hwang, Chi-Sun; Han, Seungwu; Yoon, Sung-Min
- Abstract
Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of VTH shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate VTH shift. These behaviors were visually confirmed via nanoscale transmission electron microscopy and energy-dispersive x-ray spectroscopy observations. To understand the degradation mechanism, we performed ab initio molecular dynamic simulations on the liquid phases of IGZO and IGO. The diffusivities of Ga and In atoms were enhanced in IGZO, confirming the degradation mechanism to be increased atomic diffusion.
- Subjects
PERFORMANCE of thin film transistors; PARTICLE beam instabilities; TRANSMISSION electron microscopy; MOLECULAR dynamics; THERMAL diffusivity
- Publication
Scientific Reports, 2015, p7884
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep07884