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- Title
Energy band diagram of In: ZnO/p-Si structures deposited using chemical spray pyrolysis technique.
- Authors
Hassan, Marwa; Saleh, Arwaa; Mezher, Sabah
- Abstract
Near-ideal In: ZnO/p-Si heterojunction band edge lineup has been investigated with aid of I-V and C-V measurements. The heterojunction was manufactured by spray pyrolysis method of (Zn (CHCOO)·2HO) at different indium doping concentrations on monocrystalline p-type silicon. The experimental data of the conduction band offset ∆ Ec and valence band offset ∆ Ec were compared with theoretical values. The band offset ∆ Ec = 0.45 eV and ∆ Ev = 1.65 eV obtained at 300 K. The energy band diagram of In: ZnO/p-Si HJ was constructed. C-V measurements depict that the junction was an abrupt type and the built-in voltage was determined from C-V plot.
- Publication
Applied Nanoscience, 2014, Vol 4, Issue 6, p695
- ISSN
2190-5509
- Publication type
Article
- DOI
10.1007/s13204-013-0246-5