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- Title
Fast-Switching-Speed, Low-Forward-Voltage-Drop Static Induction (SI) Thyristor.
- Authors
Maeda, Mitsuhide; Keno, Takuji; Suzuki, Yuji; Abe, Toshiro
- Abstract
A static induction (SI) thyristor using a normally-off planar-gate structure in a low power class has been developed to be used as a power switching device in a three-phase inverter circuit. A 600 V-15 A class SI thyristor with very fast switching time (tgt, tgq) and low forward voltage drop (VTM) was designed and created. This design was performed with a reasonable wafer structure (n'/n/p+), an n' base carrier concentration and thickness, and a gate structure (gate diffusion length and gate-gate pitch). Microscopic processing was used to obtain this SI thyristor. The performance trade-off between turn-off time and forward voltage drop is controlled by a lifetime control process using proton irradiation that results in a very fast switching time with tgt of 500 ns and tgq of 500 ns with VTM of 1.5 V (at IT = 18 A). At a current level of IT = 18 A, the current density in the active area becomes 200 A/cm², which indicates that the performance of the SI thyristor is superior to that of conventional IGBTs and MOSFETs.
- Subjects
THYRISTORS; POWER semiconductors; ELECTRIC switchgear; ELECTRIC appliance protection; SWITCHING circuits; ELECTRIC inverters
- Publication
Electrical Engineering in Japan, 1996, Vol 116, Issue 3, p107
- ISSN
0424-7760
- Publication type
Article
- DOI
10.1002/eej.4391160310