We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
A Memristor as Multi-Bit Memory: Feasibility Analysis.
- Authors
BASS, Ori; FISH, Alexander; NAVEH, Doron
- Abstract
The use of emerging memristor materials for advanced electrical devices such as multi-valued logic is expected to outperform today's binary logic digital technologies. We show here an example for such non-binary device with the design of a multi-bit memory. While conventional memory cells can store only 1 bit, memristor-based multi-bit cells can store more information within single device thus increasing the information storage density. Such devices can potentially utilize the non-linear resistance of memristor materials for efficient information storage. We analyze the performance of such memory devices based on their expected variations in order to determine the viability of memristor-based multi-bit memory. A design of read/write scheme and a simple model for this cell lay grounds for full integration of memristor multibit memory cell.
- Subjects
MEMRISTORS; FEASIBILITY problem (Mathematical optimization); BINARY metallic systems; PERFORMANCE evaluation; INFORMATION storage &; retrieval systems
- Publication
Radioengineering, 2015, Vol 24, Issue 2, p425
- ISSN
1210-2512
- Publication type
Article
- DOI
10.13164/re.2015.0425