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- Title
Fractal size, occupied fraction study with annealing of heterostructure based AlGaN.
- Authors
Zeybek, O.; Ayaz, A.; Öztürk, M. K.; Davarpanah, A. M.; Barrett, S. D.; Bayırlı, M.; Özçelik, S.
- Abstract
In this study, numerical analysis of temperature variation for surface structure in AlGaN thin film grown by metal organic chemical vapour deposition has been performed. Numerical studies were carried out over morphologic views which were obtained by atomic force microscope. Numerical studies namely, effect of; annealing temperature to fractal size, occupied fraction. Also the interactions of those parameters each other were examined too. Fractal dimension value adheres to temperature with 3rd degree function. At increasing temperatures, the surface morphology changed from step-flow to grain-like surface structure. The structure which is regular and repetitive each other was impaired the AlGaN surface image at temperatures over 900 °C and was well simulated for fractal size.
- Subjects
OPTICAL properties of aluminum gallium nitride; HETEROSTRUCTURES; NUMERICAL analysis; CHEMICAL vapor deposition; LIGHT emitting diodes; NANOTECHNOLOGY
- Publication
Journal of Materials Science: Materials in Electronics, 2018, Vol 29, Issue 3, p2040
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-017-8116-7