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- Title
Electronic structure and exchange interaction in GaMnAs and InMnSb magnetic semiconductors.
- Authors
Yarzhemsky, V.; Murashov, S.; Izotov, A.
- Abstract
We have calculated the electronic structure of GaMnAs and InMnSb diluted magnetic semiconductors and shown that, in agreement with recent photoelectron spectroscopy data, the Mn 4 s and Mn 3 d orbitals are hybridized with the valence band of the host semiconductor. A new approach has been developed for calculating exchange interaction in diluted magnetic semiconductors, which is based on the spin polarization of s-electrons at a magnetic center due to single-center exchange s- d matrix elements. The magnitude of exchange interaction calculated using Hartree-Fock atomic wave functions and the electrondensity-functional approach agrees well with previous data.
- Subjects
ELECTRONIC structure; GALLIUM manganese arsenide; SEMICONDUCTORS; MAGNETIC fields; WAVE functions
- Publication
Inorganic Materials, 2016, Vol 52, Issue 2, p89
- ISSN
0020-1685
- Publication type
Article
- DOI
10.1134/S0020168516020175