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- Title
Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors.
- Authors
Kleider, Jean-Paul; Johnson, Erik; Brüggemann, Rudolf; Niikura, Chisato; Shiratori, Yuta; Miyajima, Shinsuke
- Abstract
We fabricated hydrogenated amorphous Si (a-Si:H) passivation layers on the surfaces of Si wafers by using triode-type plasma-enhanced chemical vapor deposition with gas-heating, and discussed high-quality surface passivation for Si heterojunction solar cells. The sample with the a-Si:H layers corresponding to the highest proportion of SiHx(x=2,3) content in SiHx(x=1–3) content exhibited the minimum surface recombination velocity (S) after annealing. This suggests that using SiHx(x=2,3)-rich a-Si:H grown at low-temperature as a passivation layer is advantageous to inhibit an epitaxial growth at the a-Si:H/crystalline Si interface, and that a structural relaxation of the a-Si:H takes place during post-deposition annealing, drastically improving passivation quality. Also, the importance to use a low Tsub and to optimize gas-heating and the triode technique, for obtaining simultaneously higher film quality and abrupt interface, is suggested. Low S obtained for our unoptimized samples implies the potency of this deposition technique. Nevertheless, further studies are needed to elucidate the impact of gas-heating and the triode technique on Si surface passivation. Temperature-dependent effective carrier lifetime for our samples might suggest relatively large electron affinity for an a-Si:H, which might be one possible reason for high-quality surface passivation.
- Subjects
PLASMA-enhanced chemical vapor deposition; SURFACE passivation; EPITAXY; ELECTRON affinity; SURFACE recombination
- Publication
European Physical Journal - Applied Physics, 2020, Vol 88, Issue 4, p1
- ISSN
1286-0042
- Publication type
Article
- DOI
10.1051/epjap/2020190299