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- Title
The improvement of stable resistive switching in Al/ZnO/Al heterostructures by integration of amorphous carbon layers.
- Authors
Hsu, Hua Shu; Chen, Ssu Wei; Chang, Yu Ying; Chang, Chih Hao; Lee, Jiann Shing
- Abstract
This study investigates the effects of inserting amorphous carbon (a-C) layers between the Al electrode layer and the ZnO insulator layer in Al/ZnO/Al heterostructures on resistive switching (RS) therein. The inserted a-C layers can play an important role to stabilize RS behavior for random access memory performance. The complex impedance spectra of Al/ZnO/Al devices with and without a-C inserted layers examined to probe the characteristics of their conducting mechanism. The formation of meta-stable a-CO x after forming process caused repeatable redox reaction at interfaces, critically affecting RS behaviors.
- Subjects
AMORPHOUS carbon; RANDOM access memory; OXIDATION-reduction reaction; AMORPHOUS substances; NON-graphitic carbon; IMPEDANCE control
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2017, Vol 214, Issue 3, pn/a
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201600739