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- Title
Capacitance roll-off and frequency-dispersion capacitance-conductance phenomena in field plate and guard ring edge-terminated Ni/SiO<sub>2</sub>/4H-nSiC Schottky barrier diodes.
- Authors
Kumar, Vibhor; Kaminski, Nando; Maan, Anup Singh; Akhtar, Jamil
- Abstract
In this work, field plate and guard ring edge-terminated Ni/4H-nSiC Schottky barrier diodes (SBD) were fabricated using standard photolithography process. Strange peaks in capacitance-conductance curves, capacitance roll-off, and a high value of ideality factor (
- Subjects
ELECTRIC capacity; SCHOTTKY barrier; ELECTRIC admittance; PHOTOLITHOGRAPHY; SEMICONDUCTOR-metal boundaries; SILICON carbide; THERMAL conductivity
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2016, Vol 213, Issue 1, p193
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201532454