We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
FLATNESS IMPROVEMENT FOR A SHUNT-PEAKED ULTRA-WIDEBAND LOW NOISE AMPLIFIER.
- Authors
García-Vázquez, H.; Khemchandani, Sunil L.; Arias-Pérez, J.; Del Pino, J.
- Abstract
A novel configuration to achieve flat gain in wideband low noise amplifiers (LNA) is presented. It consists of a conventional shunt-peaking resistor, decoupled from the cascode stage through a capacitor A trade-off between the voltage headroom and bandwidth is obtained, improving the traditional shunt-peaking load. As an example, two LNAs for ultra-wideband (UWB), operating for mode 1 (3.1 to 4.8 GHz), are designed in CMOS 0.35 μm technology. The measured power gain is fairly flat, approximately 10 dB,for frequencies ranging from 3.1 to 5 GHz.
- Subjects
LOW noise amplifiers; ULTRA-wideband antennas; ULTRA-wideband devices; FLATNESS measurement; SHUNT electric reactors; ELECTRIC resistors; BANDWIDTHS; FM radio receivers
- Publication
Microwave Journal, 2010, Vol 53, Issue 11, p74
- ISSN
0192-6225
- Publication type
Article