We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Defect structure and electrical properties of vanadium pentoxide thin films.
- Authors
Schneider, Krystyna
- Abstract
The point defect structure of V2O3, VO2, and V2O5 is reviewed. VO2 and V2O5 thin films were deposited by means of RF sputtering from a metallic V target in a reactive Ar + O2 atmosphere. Rutherford backscattering (RBS) and secondary-ion mass spectrometry (SIMS) were used to determine the chemical and phase composition as well as the profile distribution of elements in as-sputtered and hydrogen-treated VO2 films. The electrical properties of the V2O5 thin films were determined by means of impedance spectroscopy. At elevated temperatures thin films were found to interact with oxygen. Both singly and doubly ionized oxygen vacancies and electrons were the product of these interactions. The chemical diffusion coefficient was determined by measurements of transient electrical conductivity.
- Subjects
VANADIUM pentoxide; ELECTRICAL conductivity measurement; RADIOFREQUENCY sputtering; POINT defects; MASS spectrometry
- Publication
Journal of Materials Science: Materials in Electronics, 2022, Vol 33, Issue 13, p10410
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-022-08028-9