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- Title
Surface properties of AlN and AlGaN epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy.
- Authors
Yang, Hongquan; Zhang, Xiong; Wang, Shuchang; Zhu, Min; Cui, Yiping; Dai, Ning
- Abstract
The AlN and AlGaN ( x = 0.35, 0.73) epitaxial layers were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition. The surface properties of these layers were quantitatively characterized by angle resolved X-ray photoelectron spectroscopy. The characterization results revealed that the air-exposed surfaces of the Al-containing AlN and AlGaN films were covered by a thin Al-oxide layer due to the large chemical affinity of aluminum to oxygen. The as-deposited AlN film was proved to be a nitrogen-deficient film. On the other hand, the Ga Auger effect for the as-deposited AlGaN film was found to be greatly suppressed by increasing Al composition. Moreover, the Al composition in the as-deposited AlGaN films was demonstrated to be non-uniform since Al atom is more easily oxidized than Ga atom, especially for the AlGaN film with relatively high Al content. Our work will be beneficial to understanding and controlling of the surface properties for Al-containing III-nitrides.
- Subjects
ELECTRIC properties of aluminum nitride; ELECTRIC properties of aluminum gallium nitride; EPITAXIAL layers; X-ray photoelectron spectroscopy; SAPPHIRES; ORGANOMETALLIC compounds; CHEMICAL vapor deposition
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 2, p950
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-014-2487-9