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- Title
Measurement of the internal photoeffect quantum yield in semiconductors.
- Authors
Arbuzov, Yu.; Evdokimov, V.; Shepovalova, O.
- Abstract
A method for measuring the internal photoeffect quantum yield in various semiconductors is described. It is based on the fact that the dependence of the charge-carrier separation coefficient at a p-n junction on the wavelength of incident radiation in the proposed structure is constant in a wide range of short wavelengths. The results of measurements of the spectral sensitivity at two wavelengths, one of which is chosen in a region where the quantum yield is a priori equal to unity, is calculated for the second wavelength.
- Subjects
SEMICONDUCTORS; QUANTUM electronics; PHOTOELECTRIC effect; CHARGE carriers; COEFFICIENTS (Statistics); WAVELENGTHS; INCIDENT radiation intensity
- Publication
Instruments & Experimental Techniques, 2013, Vol 56, Issue 4, p444
- ISSN
0020-4412
- Publication type
Article
- DOI
10.1134/S0020441213040015