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- Title
The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation.
- Authors
Song, Juan; Luo, Zijiang; Liu, Xuefei; Li, Ershi; Jiang, Chong; Huang, Zechen; Li, Jiawei; Guo, Xiang; Ding, Zhao; Wang, Jihong
- Abstract
In this paper, the structure and photoelectric characteristics of zincblende InxGa1−xN alloys are systematically calculated and analyzed based on the density functional theory, including the lattice constant, band structure, distribution of electronic states, dielectric function, and absorption coefficient. The calculation results show that with the increase in x, the lattice constants and the supercell volume increase, whereas the bandgap tends to decrease, and InxGa1−xN alloys are direct band gap semiconductor materials. In addition, the imaginary part of the dielectric function and the absorption coefficient are found to redshift with the increase in indium composition, expanding the absorption range of visible light. By analyzing the lattice constants, polarization characteristics, and photoelectric properties of the InxGa1−xN systems, it is observed that zincblende InxGa1−xN can be used as an alternative material to replace the channel layer of wurtzite InxGa1−xN heterojunction high electron mobility transistor (HEMT) devices to achieve the manufacture of HEMT devices with higher power and higher frequency. In addition, it also provides a theoretical reference for the practical application of InxGa1−xN systems in optoelectronic devices.
- Subjects
HETEROJUNCTIONS; LATTICE constants; BAND gaps; SEMICONDUCTOR materials; DIELECTRIC function; MODULATION-doped field-effect transistors; ABSORPTION coefficients; NITRIDES
- Publication
Crystals (2073-4352), 2020, Vol 10, Issue 12, p1159
- ISSN
2073-4352
- Publication type
Article
- DOI
10.3390/cryst10121159