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- Title
Two-Terminal Nonvolatile Write-Once-Read-Many-Times Memory Based on All-Inorganic Halide Perovskite.
- Authors
Yu, Zhipeng; Zhao, Xiaofeng; Ai, Chunpeng; Fang, Xin; Zhao, Xiaohan; Wang, Yanchao; Zhang, Hongquan
- Abstract
Write-once-read-many-times (WORM) memory belonging to an important non-volatile memory type achieves the read-only state after the write operation and is used in the fields of data security storage widely. WORM memory has been developed based on a variety of materials. In recent years, halide perovskites have become the research hotspot material for this memory due to its excellent properties. Here, the all-inorganic CsPbBr3 perovskite thin film was prepared on a FTO substrate by using a two-step method. The prepared CsPbBr3 thin films have the characteristics of densely packed crystal grains and smooth surface. The device, having the FTO/CsPbBr3/Al sandwich structure by evaporating the Al electrode onto the CsPbBr3 thin film, represents the typical WORM behavior, with long data retention time (104 s), a low operation voltage (2.1 V) and a low reading voltage (0.1 V). Additionally, the resistance transition mechanism of the resulting WORM devices was analyzed.
- Subjects
NONVOLATILE memory; PEROVSKITE; THIN films; RECORDS management; HALIDES; SANDWICH construction (Materials)
- Publication
Micromachines, 2023, Vol 14, Issue 1, p93
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi14010093