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- Title
PECVD a-Si layers for industrial high- efficiency solar cell processing.
- Authors
Hofmann, Marc; Rentsch, Jochen; Glunz, Stefan W.; Preu, Ralf
- Abstract
Amorphous silicon is one of the most effective materials in passivating silicon interfaces. At Fraunhofer ISE, highly passivating amorphous silicon coatings were developed by an industrially applicable Plasma-Enhanced Chemical Vapour Deposition (PECVD) process. Thin-film stacks of amorphous silicon and SiOx display excellent passivation quality, indicated by effective charge carrier lifetimes ranging from 900 to 1600μs and resulting surface recombination velocities between 9 and 3cm/s-1. The demonstrated temperature stability opens up new application opportunities also for amorphous silicon films in the industrial production of highly efficient solar cell structures, which will be further discussed in this paper.
- Subjects
ITZEHOE (Germany); GERMANY; PLASMA-enhanced chemical vapor deposition; AMORPHOUS substances; SILICON; SOLAR cells; INTEGRATED circuit passivation; FRAUNHOFER-Institut fur Siliziumtechnologie
- Publication
Photovoltaics International, 2009, Issue 4, p68
- ISSN
1757-1197
- Publication type
Article