We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
STRUCTURAL TRANSFORMATIONS IN IRON THIN FILMS ON SILICON SUBSTRATE.
- Authors
Saltykov, S. N.; Khoviv, A. M.
- Abstract
During annealing of iron films (20-270 nm) on silicon substrate phase-formation process consists of two stages. Under temperature less than 130°C the increasing of iron lattice parameter from 2.8663 (traditional bcc lattice) A up to 2.8737 A is observed and solid solution Fe(Si) is formed. The width of transition region (Fe/Si) is increasing up to 30 nm. Under temperature 180°C the phase Fe5Si3 which is an ordered solid solution and which exists under 800°C only is formed and stabilized in thin film state. The forming of Fe(Si)-phase is initiated by polygonization process of iron structure. Recrystallization process of iron structure is observed only at film thickness more than 100 nm.
- Subjects
METALLIC thin films; ANNEALING of metals; RECRYSTALLIZATION (Metallurgy); ELECTRON beam annealing; HEAT treatment of metals
- Publication
Smart Nanocomposites, 2015, Vol 6, Issue 2, p273
- ISSN
1949-4823
- Publication type
Article