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- Title
Threshold simulation of 1.3-µm oxide-confined in-plane quantum-dot (InGa)As/GaAs lasers.
- Authors
Sarzala, R. P.; Wasiak, M.; Czyszanowski, T.; Bugajski, M.; Nakwaski, W.
- Abstract
In the paper, the self-consistent optical-electrical-thermal-gain model of the oxide-confined long-wavelength 1.3-µm quantum-dot (InGa)As/GaAs diode laser is demonstrated. The model has been applied to analyse room-temperature (RT) threshold-operation characteristics of the advanced laser of this kind. It may be used to describe physics of the above arsenide-based diode lasers to better understand their threshold performance and finally to optimize their structures.
- Subjects
DIODES; QUANTUM dots; SEMICONDUCTORS; QUANTUM electronics; LASERS; PHYSICAL sciences
- Publication
Optical & Quantum Electronics, 2003, Vol 35, Issue 7, p675
- ISSN
0306-8919
- Publication type
Article
- DOI
10.1023/A:1023977203373